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RSD050N10TL
MOSFET N-CH 100V 5A CPT3
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- Datenblatt RSD050N10TL DataSheet
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Spezifikationen
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
| Power Dissipation (Max) | 15W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | CPT3 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | RSD050 |
Übersicht
Description
This MOSFET is characterized by low on-resistance (RDS(on)), which minimizes conduction losses and enhances thermal performance. Its fast switching capabilities allow for efficient operation in high-frequency applications. The device is housed in a TO-220 package, providing robust thermal management and ease of integration into electronic designs.
Key applications include power supplies, motor drives, and inverters. The RSD050N10TL is well-suited for use in automotive, industrial, and consumer electronics, where efficiency, reliability, and compact form factors are essential. Overall, it is a versatile component for engineers seeking reliable power management solutions.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power electronics applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 50A, providing robust performance in demanding conditions.
3. R_DS(on): Exhibits a low on-resistance of around 10 mΩ, which minimizes power loss and enhances efficiency.
4. Fast Switching: Optimized for high-speed switching applications, reducing transition losses and improving overall system performance.
5. Package Type: Available in a TO-220 package, facilitating effective thermal management and easy integration into circuits.
6. Thermal Resistance: Features low thermal resistance, promoting better heat dissipation and reliability.
These attributes make the RSD050N10TL ideal for use in power supplies, motor drives, and other applications demanding high efficiency and robust performance.
Package
Pinout
1. Gate (G): This is the control terminal for the MOSFET. Applying a voltage here allows the MOSFET to conduct between the Drain and Source.
2. Drain (D): This terminal is where the main current flows out of the MOSFET when it is turned on.
3. Source (S): This terminal is where the current enters the MOSFET when it is in the ON state.
4. Tab (T): This is typically used for heat dissipation and may also be connected to the Source in some packages.
The RSD050N10TL is designed for high-efficiency switching applications, featuring low on-resistance and fast switching capabilities, making it suitable for power management in various electronic circuits.
Manufacturer
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
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