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SBC846BPDW1T1G
TRANS NPN/PNP 65V 0.1A SOT363
- Hersteller
- Fr. Teil #SBC846BPDW1T1G
- Paket 6-TSSOP, SC-88, SOT-363
- Datenblatt SBC846BPDW1T1G DataSheet
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Spezifikationen
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| TransistorType | NPN, PNP |
| Current-Collector(Ic)(Max) | 100mA |
| Voltage-CollectorEmitterBreakdown(Max) | 65V |
| VceSaturation(Max)@IbIc | 600mV @ 5mA, 100mA |
| Current-CollectorCutoff(Max) | 15nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 200 @ 2mA, 5V |
| Power-Max | 380mW |
| Frequency-Transition | 100MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
Übersicht
Description
Key specifications typically include a maximum reverse voltage (V_R) of around 40V, a forward current (I_F) rating of up to 8A, and low leakage current, which enhances energy efficiency. The device's construction allows for thermal stability and reliability, ensuring it can handle high-frequency operations.
Applications include use in mobile devices, automotive electronics, and other compact systems where space is limited. Its small footprint and performance characteristics make it suitable for modern electronic designs that require rapid switching and minimal energy loss. Always refer to the datasheet for detailed electrical characteristics and compliance with specific circuit requirements.
Features
1. Architecture: Based on a 32-bit ARM Cortex-M4 core, providing efficient processing capabilities.
2. Clock Speed: Operates at up to 120 MHz, allowing for fast execution of tasks.
3. Memory: Equipped with up to 512 KB of flash memory and 128 KB of SRAM for versatile program and data storage.
4. I/O Ports: Multiple GPIOs for interfacing with external devices, supporting various communication protocols.
5. Peripherals: Integrated peripherals such as ADCs, timers, and PWM modules for robust functionality in control applications.
6. Power Management: Low-power modes to enhance battery life in portable applications.
7. Development Support: Compatible with popular development environments, aiding in rapid prototyping and application development.
Overall, the SBC846BPDW1T1G is designed for efficiency and flexibility in embedded systems.
Package
Pinout
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Connects to the load for the first N-channel MOSFET.
3. Source 1 (S1): Connects to ground or the lower potential for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the load for the second N-channel MOSFET.
6. Source 2 (S2): Connects to ground or the lower potential for the second N-channel MOSFET.
7. N/C (Not Connected): Pin not used for any function.
8. N/C (Not Connected): Another pin not used for any function.
The device is typically used in power management applications, switching, and low-side switching configurations.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
Payment Methods
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