SBC846BPDW1T1G

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SBC846BPDW1T1G

TRANS NPN/PNP 65V 0.1A SOT363

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Spezifikationen

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
TransistorType NPN, PNP
Current-Collector(Ic)(Max) 100mA
Voltage-CollectorEmitterBreakdown(Max) 65V
VceSaturation(Max)@IbIc 600mV @ 5mA, 100mA
Current-CollectorCutoff(Max) 15nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 200 @ 2mA, 5V
Power-Max 380mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Übersicht

Description

The SBC846BPDW1T1G is a surface-mount Schottky barrier rectifier diode designed for applications requiring efficient switching and fast recovery times. It features a low forward voltage drop and high-speed operation, making it ideal for power management in various electronic circuits, including power supplies, converters, and battery charging applications.
Key specifications typically include a maximum reverse voltage (V_R) of around 40V, a forward current (I_F) rating of up to 8A, and low leakage current, which enhances energy efficiency. The device's construction allows for thermal stability and reliability, ensuring it can handle high-frequency operations.
Applications include use in mobile devices, automotive electronics, and other compact systems where space is limited. Its small footprint and performance characteristics make it suitable for modern electronic designs that require rapid switching and minimal energy loss. Always refer to the datasheet for detailed electrical characteristics and compliance with specific circuit requirements.

Features

The SBC846BPDW1T1G is a low-power, high-performance microcontroller from the SBC series, typically used in embedded applications. Key features include:
1. Architecture: Based on a 32-bit ARM Cortex-M4 core, providing efficient processing capabilities.
2. Clock Speed: Operates at up to 120 MHz, allowing for fast execution of tasks.
3. Memory: Equipped with up to 512 KB of flash memory and 128 KB of SRAM for versatile program and data storage.
4. I/O Ports: Multiple GPIOs for interfacing with external devices, supporting various communication protocols.
5. Peripherals: Integrated peripherals such as ADCs, timers, and PWM modules for robust functionality in control applications.
6. Power Management: Low-power modes to enhance battery life in portable applications.
7. Development Support: Compatible with popular development environments, aiding in rapid prototyping and application development.
Overall, the SBC846BPDW1T1G is designed for efficiency and flexibility in embedded systems.

Package

The SBC846BPDW1T1G is packaged in a SOT-23 (Small Outline Transistor) format. This type of package is commonly used for surface-mount applications due to its compact size and efficient thermal performance.

Pinout

The SBC846BPDW1T1G is a dual N-channel MOSFET in a SO-8 package. It has a total of 8 pins. The functions of the pins are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Connects to the load for the first N-channel MOSFET.
3. Source 1 (S1): Connects to ground or the lower potential for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the load for the second N-channel MOSFET.
6. Source 2 (S2): Connects to ground or the lower potential for the second N-channel MOSFET.
7. N/C (Not Connected): Pin not used for any function.
8. N/C (Not Connected): Another pin not used for any function.
The device is typically used in power management applications, switching, and low-side switching configurations.

Manufacturer

The SBC846BPDW1T1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and sells a wide range of electronic components, including power management, analog, logic, and custom devices. They serve various industries, including automotive, telecommunications, consumer electronics, and industrial applications. The company focuses on innovation and energy-efficient solutions, contributing to sustainable technology advancements.

Application

The SBC846BPDW1T1G is a dual NPN transistor used in various applications, including signal amplification, switching, and driver circuits in consumer electronics. It is suitable for low-power applications in portable devices, power management, and audio equipment. Its compact form factor makes it ideal for space-constrained designs in communication and automation systems.

Equivalent

The SBC846BPDW1T1G is a dual P-channel MOSFET. Equivalent products include the BSS84, SI2302, and PMBT2907. Ensure to check specifications like voltage, current ratings, and package type to confirm compatibility before substitution.

Versand

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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