SCT025W120G3-4AG

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SCT025W120G3-4AG

TO247-4

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Spezifikationen

Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 37mOhm @ 25A, 18V
Vgs(th) (Max) @ Id 4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 18 V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 800 V
Power Dissipation (Max) 388W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package TO-247-4
Packaging Tube

Übersicht

Description

The SCT025W120G3-4AG is a high-performance Silicon Carbide (SiC) MOSFET designed for power electronics applications. It features a voltage rating of 1200V and a current rating of 25A, making it suitable for various high-voltage and high-frequency applications, such as inverters, converters, and power supplies.
This device offers low on-resistance (R_DS(on)) and fast switching capabilities, which contribute to improved efficiency and reduced thermal management requirements in power systems. The SiC technology enhances performance at elevated temperatures and enables higher operating frequencies compared to traditional silicon-based MOSFETs.
The SCT025W120G3-4AG is ideal for applications in renewable energy systems, electric vehicles, and industrial motor drives, among others. Its robust design and efficiency make it a popular choice for engineers looking to optimize power conversion systems.

Features

The SCT025W120G3-4AG is a high-performance silicon carbide (SiC) MOSFET designed for power electronics applications. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: 25A, enabling robust performance in power systems.
3. Low On-Resistance: Enhanced efficiency with reduced conduction losses.
4. High-Speed Switching: Fast switching capabilities minimize switching losses, improving overall efficiency.
5. Thermal Performance: Excellent thermal conductivity allows for better heat dissipation and reliability.
6. Ruggedness: Built to withstand harsh environments, making it suitable for industrial applications.
7. Gate Threshold Voltage: Optimized for easy drive requirements and compatibility with existing systems.
8. Applications: Ideal for use in power converters, inverters, and other high-efficiency power management systems.
Overall, the SCT025W120G3-4AG is suitable for various applications requiring high efficiency and reliability in power conversion.

Package

The SCT025W120G3-4AG is packaged in a TO-247 format, which is a type of discrete power semiconductor package designed for efficient heat dissipation and easy mounting on heatsinks in power electronics applications.

Pinout

The SCT025W120G3-4AG is a silicon carbide (SiC) MOSFET from the SCT series. It features a total of 6 pins. The pin configuration typically includes:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The main current-carrying terminal where the load is connected.
3. Source (S) - Common reference terminal, usually connected to ground or the negative side of the power supply.
4. Additional pins - May include a thermistor for temperature sensing or other functionality depending on the specific package design.
This device is designed for high-efficiency power switching applications, and its SiC technology allows for higher voltage operation and thermal performance compared to traditional silicon MOSFETs. Always refer to the specific datasheet for precise pin assignments and electrical characteristics.

Manufacturer

The SCT025W120G3-4AG is manufactured by ON Semiconductor Corporation, a leading global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products and technologies, including power management, analog, RF, and embedded processing, catering to various applications across industries such as automotive, industrial, and consumer electronics. The company is known for its commitment to energy efficiency and sustainable practices in semiconductor manufacturing.

Application

The SCT025W120G3-4AG is a silicon carbide (SiC) MOSFET primarily used in high-efficiency power conversion applications. Its application areas include electric vehicles (EVs), renewable energy systems (such as solar inverters), industrial motor drives, power supplies, and high-frequency switching applications. Its ability to operate at higher temperatures and voltages makes it suitable for demanding environments in various power electronic systems.

Equivalent

The SCT025W120G3-4AG is a GaN (gallium nitride) FET used in power electronics. Equivalent products include:
1. EPC2023
2. GANFETs from Infineon (e.g., IGBT replacements)
3. APT20M120L2G
Always verify specifications like voltage, current rating, and switching speed for specific applications.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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