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SCT070HU120G3AG
HU3PAK
- Hersteller
- Fr. Teil #SCT070HU120G3AG
- Paket
- Datenblatt SCT070HU120G3AG DataSheet
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Spezifikationen
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 15A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 850 V |
| Power Dissipation (Max) | 223W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | HU3PAK |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
Übersicht
Description
The "120G" in the model indicates that it can handle a maximum voltage of 1200V, making it suitable for high-voltage applications. The device is optimized for fast switching speeds, enabling reduced energy losses and improved thermal management in power conversion systems.
This MOSFET is typically used in applications like DC-DC converters, motor drives, and renewable energy systems, where efficiency and thermal performance are critical. It also supports high-frequency operation, contributing to smaller and lighter power electronics designs. Overall, the SCT070HU120G3AG is an advanced component that enhances the performance and reliability of modern power electronic systems.
Features
1. Voltage Rating: With a maximum voltage of 1200V, it is suitable for high-voltage applications.
2. Low RDS(on): Offers low on-resistance, which reduces conduction losses and enhances efficiency.
3. Fast Switching: High switching speed minimizes switching losses, making it ideal for applications like inverters and converters.
4. Thermal Performance: Capable of handling high temperatures, providing robustness in demanding environments.
5. Gate Drive Compatibility: Designed for easy compatibility with various gate drive circuits.
6. Low Reverse Recovery: Reduced reverse recovery charge, leading to improved performance in hard-switching applications.
7. Package Type: Typically available in a TO-247 package, facilitating heat dissipation and mounting.
This MOSFET is well-suited for energy-efficient power systems, electric vehicles, and renewable energy applications, delivering reliable performance and high efficiency.
Package
Pinout
Key functions of the pins often involve gate control, source, and drain connections, facilitating the operation of the MOSFET in power management systems. Specific pin assignments may include:
1. Gate (G) - Controls the MOSFET operation.
2. Source (S) - Connected to the lower potential in the circuit.
3. Drain (D) - Connected to the load or higher potential.
Always refer to the manufacturer's datasheet for precise electrical characteristics, pin configuration, and application details to ensure proper usage.
Manufacturer
Application
Equivalent
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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