SCT070HU120G3AG

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SCT070HU120G3AG

HU3PAK

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Spezifikationen

Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 87mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 850 V
Power Dissipation (Max) 223W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package HU3PAK
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Übersicht

Description

The SCT070HU120G3AG is a high-performance silicon carbide (SiC) MOSFET designed for various industrial applications, including power converters and electric vehicles. As a wide bandgap semiconductor, SiC offers advantages over traditional silicon devices, such as higher efficiency, increased thermal conductivity, and greater voltage handling capabilities.
The "120G" in the model indicates that it can handle a maximum voltage of 1200V, making it suitable for high-voltage applications. The device is optimized for fast switching speeds, enabling reduced energy losses and improved thermal management in power conversion systems.
This MOSFET is typically used in applications like DC-DC converters, motor drives, and renewable energy systems, where efficiency and thermal performance are critical. It also supports high-frequency operation, contributing to smaller and lighter power electronics designs. Overall, the SCT070HU120G3AG is an advanced component that enhances the performance and reliability of modern power electronic systems.

Features

The SCT070HU120G3AG is a high-performance silicon carbide (SiC) MOSFET designed for power applications. Key features include:
1. Voltage Rating: With a maximum voltage of 1200V, it is suitable for high-voltage applications.
2. Low RDS(on): Offers low on-resistance, which reduces conduction losses and enhances efficiency.
3. Fast Switching: High switching speed minimizes switching losses, making it ideal for applications like inverters and converters.
4. Thermal Performance: Capable of handling high temperatures, providing robustness in demanding environments.
5. Gate Drive Compatibility: Designed for easy compatibility with various gate drive circuits.
6. Low Reverse Recovery: Reduced reverse recovery charge, leading to improved performance in hard-switching applications.
7. Package Type: Typically available in a TO-247 package, facilitating heat dissipation and mounting.
This MOSFET is well-suited for energy-efficient power systems, electric vehicles, and renewable energy applications, delivering reliable performance and high efficiency.

Package

The SCT070HU120G3AG is packaged in a TO-220 format. This package type is typically used for power devices, providing a good balance of thermal performance and ease of mounting.

Pinout

The SCT070HU120G3AG is a Silicon Carbide (SiC) MOSFET that typically features a pin count of 6. The primary functions of this device include high-efficiency power switching and fast switching speeds, making it suitable for applications such as power converters, motor drives, and renewable energy systems.
Key functions of the pins often involve gate control, source, and drain connections, facilitating the operation of the MOSFET in power management systems. Specific pin assignments may include:
1. Gate (G) - Controls the MOSFET operation.
2. Source (S) - Connected to the lower potential in the circuit.
3. Drain (D) - Connected to the load or higher potential.
Always refer to the manufacturer's datasheet for precise electrical characteristics, pin configuration, and application details to ensure proper usage.

Manufacturer

The SCT070HU120G3AG is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its wide range of products, including microcontrollers, sensors, power management ICs, and discrete components, which serve various markets such as automotive, industrial, consumer electronics, and telecommunications. The company is headquartered in Geneva, Switzerland, and is recognized for its commitment to innovation and sustainability in the semiconductor industry.

Application

The SCT070HU120G3AG is a silicon carbide (SiC) MOSFET designed for high-efficiency power applications. Its application areas include electric vehicles, renewable energy systems (like solar inverters), industrial power supplies, and high-frequency switching converters. Its high thermal conductivity and efficiency make it suitable for demanding environments where performance and reliability are crucial.

Equivalent

The SCT070HU120G3AG is a Silicon Carbide (SiC) MOSFET. Equivalent products include the Infineon IGBT series, ON Semiconductor NTP series, and Wolfspeed's C3M series. Specific equivalents may vary based on voltage, current ratings, and packaging. Always check datasheets for precise specifications and compatibility.

Versand

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von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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