SCT3030ARC14

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SCT3030ARC14

SICFET N-CH 650V 70A TO247-4L

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Spezifikationen

Package Tube
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 70A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 18V
RdsOn(Max)@IdVgs 39mOhm @ 27A, 18V
Vgs(th)(Max)@Id 5.6V @ 13.3mA
GateCharge(Qg)(Max)@Vgs 104 nC @ 18 V
Vgs(Max) +22V, -4V
InputCapacitance(Ciss)(Max)@Vds 1526 pF @ 500 V
PowerDissipation(Max) 262W
OperatingTemperature 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-4L

Übersicht

Description

SCT3030ARC14 is a course designed for students interested in the intersection of technology, architecture, and urban design. It typically covers advanced concepts related to sustainable construction technologies, spatial analysis, and the application of architectural theory in contemporary practice. The curriculum may include topics such as building information modeling (BIM), smart city design, and environmental impact assessment, equipping students with the necessary skills to tackle modern architectural challenges.
Emphasizing both theoretical foundations and practical applications, the course encourages students to engage in critical thinking and innovative design processes. Projects often involve real-world scenarios, allowing students to collaborate on solutions that address environmental sustainability and urban development. By the end of the course, participants are expected to have a comprehensive understanding of current trends and technologies in architecture and construction, preparing them for careers in a rapidly evolving field.

Features

The SCT3030ARC14 is a high-performance SiC MOSFET designed for various power applications. It features a maximum drain-source voltage (VDS) of 300V and a continuous drain current (ID) of 30A, making it suitable for high-efficiency power conversion and switching applications. Key features include:
1. Low On-State Resistance (RDS(on)): This results in lower conduction losses, enhancing efficiency.
2. High Switching Speed: Enables fast operation, reducing switching losses in applications like converters and inverters.
3. Thermal Performance: Excellent thermal conductivity aids in managing heat, allowing for reliable operation at high temperatures.
4. High Breakdown Voltage: Provides robustness in demanding environments.
5. Simple Gate Drive: Compatible with standard gate drive voltages, facilitating integration into existing systems.
The SCT3030ARC14 is ideal for use in applications such as solar inverters, motor drives, and other power management systems.

Package

The SCT3030ARC14 is packaged in a TO-220 type package. This format is commonly used for power semiconductors, providing effective heat dissipation and easy mounting on heatsinks for thermal management.

Pinout

The SCT3030ARC14 is a Schottky barrier rectifier with a pin count of 4. The functions of its pins are as follows:
1. Anode 1 (A1): Connects to the positive side of the circuit.
2. Cathode 1 (K1): Connects to the negative side or load of the circuit.
3. Anode 2 (A2): Provides an additional anode connection for parallel operation or increased current capacity.
4. Cathode 2 (K2): Complements the second anode, connecting to the negative side or load.
This device is suitable for applications requiring fast switching and low forward voltage drop, making it ideal for power management and rectification in various electronic circuits.

Manufacturer

The SCT3030ARC14 is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of products, including analog, digital, and mixed-signal devices. The company focuses on power management, high-performance computing, and automotive applications, among others. With a strong emphasis on innovation and sustainability, ON Semiconductor provides technologies that enable energy-efficient designs and support the growing demand for semiconductors in various industries, including automotive, industrial, and consumer electronics.

Application

The SCT3030ARC14 is a silicon carbide (SiC) MOSFET primarily used in high-efficiency power conversion applications. Its key application areas include electric vehicles (EVs), renewable energy systems (like solar inverters), industrial motor drives, and power supplies for telecommunications. The SiC technology enhances performance, enabling higher voltage, greater thermal efficiency, and reduced switching losses, making it ideal for demanding environments.

Equivalent

The SCT3030ARC14 is a Silicon Carbide (SiC) MOSFET. Equivalent products typically include other SiC MOSFETs with similar specifications from various manufacturers. Notable alternatives include the C3M0120090D from Cree, the MPS2-30D from ON Semiconductor, and the STP30N60M5 from STMicroelectronics. Always verify specifications such as voltage rating, current rating, and switching characteristics for compatibility.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

Die Zahlungsfrist ist 100% Prepaid.

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