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SCT52240STDR
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- Fr. Teil #SCT52240STDR
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- Datenblatt SCT52240STDR DataSheet
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Spezifikationen
| Manufacturer | SCT |
| Package | SOP-8 |
| Voltage - Supply | 4.5V~24V |
| Operating Temperature | -40℃~+150℃ |
| Driven Configuration | Low edge |
| Load Type | IGBT |
| Fall Time | 8ns |
| Rise Time | 8ns |
Übersicht
Description
The advantages of using SiC technology include lower forward voltage drop, faster switching speeds, and higher thermal conductivity compared to traditional silicon diodes, which translates to reduced power losses and improved system efficiency. The SCT52240STDR is packaged in a TO-220 format, allowing for easy installation and effective heat dissipation.
This diode is ideal for applications where high efficiency, reliability, and compact design are critical, contributing significantly to the performance of modern power electronic systems. Always refer to the manufacturer's datasheet for specific electrical characteristics and application guidelines.
Features
1. Voltage Rating: Operates at a maximum voltage of 1200V, suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous currents up to 50A, allowing for significant power delivery.
3. RDS(on): Low on-resistance provides enhanced efficiency and reduced power losses during operation.
4. Fast Switching: Enables higher switching speeds, improving overall system efficiency and performance.
5. Thermal Performance: Offers superior thermal conductivity, allowing for better heat dissipation and reliability.
6. Gate Drive Voltage: Compatible with standard gate drive voltages, simplifying integration into existing systems.
7. Robustness: High ruggedness and reliability in harsh environments, making it suitable for industrial applications.
These features make the SCT52240STDR ideal for use in applications such as power inverters, motor drives, and other high-efficiency power conversion systems.
Package
Pinout
Pin Count: 16 pins
Function of Key Pins:
1. IN: Input signal for controlling the gate drive.
2. OUT: Output signal driving the gate of the MOSFET/IGBT.
3. VCC: Power supply pin for the driver.
4. GND: Ground reference for the driver.
5. COM: Common pin for the bootstrap capacitor.
6. VB: Bootstrap supply voltage for high-side driving.
7. VS: Source connection for high-side MOSFET.
8. FAULT: Open-drain output for fault indication.
The device supports both high-side and low-side driving, providing fast switching capabilities and enhanced efficiency in power conversion applications. Always refer to the specific datasheet for detailed electrical characteristics and application guidelines.
Manufacturer
Application
Equivalent
1. C3M0065100K - Cree SiC MOSFET
2. STP10NK90Z - STMicroelectronics
3. MPS2N70 - Microsemi
It's essential to verify specifications such as voltage, current rating, and Rds(on) to ensure compatibility for specific applications.
Versand
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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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