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SCTW35N65G2V
SICFET N-CH 650V 45A HIP247
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- Fr. Teil #SCTW35N65G2V
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- Datenblatt SCTW35N65G2V DataSheet
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Spezifikationen
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 45A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 18V, 20V |
| RdsOn(Max)@IdVgs | 67mOhm @ 20A, 20V |
| Vgs(th)(Max)@Id | 5V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 73 nC @ 20 V |
| Vgs(Max) | +22V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 1370 pF @ 400 V |
| PowerDissipation(Max) | 240W (Tc) |
| OperatingTemperature | -55°C ~ 200°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | HiP247™ |
Übersicht
Description
This MOSFET features low on-resistance, which reduces power loss during operation, making it suitable for applications such as power converters, motor drives, and renewable energy systems. Its high switching speeds contribute to reduced electromagnetic interference (EMI) and improved system efficiency. Additionally, the SCTW35N65G2V is often utilized in high-temperature environments due to its robust thermal characteristics.
Overall, this device is ideal for applications requiring efficient and reliable switching solutions in challenging conditions.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 35A, which is beneficial for demanding power systems.
3. Low On-Resistance: The device features a low R_DS(on) value, typically around 0.14 ohms, enhancing efficiency by reducing conduction losses.
4. High-Speed Switching: It offers fast switching capabilities, promoting improved performance in various applications like converters and inverters.
5. Thermal Performance: With a maximum junction temperature of 150°C, it provides reliable operation under elevated thermal conditions.
6. Package Type: It is available in a TO-247 package, facilitating easy mounting and heat dissipation.
Overall, the SCTW35N65G2V is ideal for use in power supplies, motor drives, and renewable energy applications due to its robust specifications and efficiency.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching behavior. Applying a voltage to this pin turns the device on or off.
2. Drain (D): The current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the lower potential side, completing the circuit when the MOSFET is active.
4. Body Diode: While not a pin, the device includes an intrinsic body diode between the source and drain, which can conduct in the reverse direction.
The SCTW35N65G2V has a voltage rating of 650V and a continuous drain current rating of 35A, making it suitable for high-voltage applications such as power supplies and motor drives.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
Payment Methods
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