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SI1902DL-T1-E3
MOSFET 2N-CH 20V 0.66A SC70-6
- Hersteller
- Fr. Teil #SI1902DL-T1-E3
- Paket 6-TSSOP, SC-88, SOT-363
- Datenblatt SI1902DL-T1-E3 DataSheet
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Spezifikationen
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 660mA |
| RdsOn(Max)@IdVgs | 385mOhm @ 660mA, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 1.2nC @ 4.5V |
| Power-Max | 270mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
Übersicht
Description
Key features include a wide operating temperature range, minimal distortion, and low power consumption, which contribute to its efficiency and reliability. The device is packaged in a compact format, facilitating easy integration into space-constrained designs.
Additionally, the SI1902DL-T1-E3 supports both digital and analog signals, providing flexibility in application. Its robust design ensures durability in various operating conditions, making it a favored choice for engineers working on modern electronic circuits. Overall, the SI1902DL-T1-E3 is an ideal solution for tasks requiring efficient signal management in compact electronic systems.
Features
1. Voltage Rating: It supports a drain-source voltage (V_DS) of up to 30V.
2. Current Capacity: The device can handle continuous drain currents (I_D) of approximately 8A.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of around 0.045 ohms, ensuring efficient performance with minimal power loss.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges from 1V to 2V, allowing for easy drive with lower gate voltages.
5. Package Type: Available in a SO-8 package, which is compact and suitable for surface mount applications.
6. Fast Switching: Its design enables rapid switching speeds, making it ideal for high-frequency applications.
These features make the SI1902DL-T1-E3 suitable for power management, motor control, and general-purpose switching applications in consumer electronics and industrial systems.
Package
Pinout
Pin Count and Functions:
1. Pin 1 (G): Gate of the first N-channel MOSFET.
2. Pin 2 (S1): Source of the first N-channel MOSFET.
3. Pin 3 (D1): Drain of the first N-channel MOSFET.
4. Pin 4 (D2): Drain of the second N-channel MOSFET.
5. Pin 5 (S2): Source of the second N-channel MOSFET.
6. Pin 6 (G): Gate of the second N-channel MOSFET.
This configuration allows for efficient operation in low-voltage, low-power applications. The device provides high-speed switching and low on-resistance, making it suitable for various electronic circuits.
Manufacturer
Application
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Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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