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SI2304DDS-T1-GE3
MOSFET N-CH 30V 3.3A/3.6A SOT23
- Hersteller
- Fr. Teil #SI2304DDS-T1-GE3
- Paket SOT23-3
- Datenblatt SI2304DDS-T1-GE3 DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 3.3A (Ta), 3.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 3.2A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 6.7 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 235 pF @ 15 V |
| PowerDissipation(Max) | 1.1W (Ta), 1.7W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Übersicht
Description
The "T1" designation typically indicates the package type, while "GE3" signifies that the part is RoHS compliant, meaning it is free from harmful substances. Overall, the SI2304DDS-T1-GE3 is popular in consumer electronics, automotive applications, and industrial systems for its reliability and performance in switching applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The continuous drain current (I_D) is rated at 20A, making it suitable for high-current applications.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 8.5 mΩ at V_GS = 10V, enhancing efficiency and thermal performance.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1V to 2.5V, allowing for operation with low gate voltages.
5. Package Type: It is available in a compact and thermally efficient SO-8 package, facilitating easy integration in various layouts.
6. Fast Switching: The device provides fast switching speeds, ideal for applications like DC-DC converters and power management systems.
7. Thermal Performance: It features good thermal characteristics, ensuring reliable operation under load.
Overall, the SI2304DDS-T1-GE3 is an efficient and versatile component for electronic circuit designs.
Package
Pinout
1. Gate1 (G1): Controls the first MOSFET.
2. Drain1 (D1): The drain terminal for the first MOSFET.
3. Source1 (S1): The source terminal for the first MOSFET.
4. Gate2 (G2): Controls the second MOSFET.
5. Drain2 (D2): The drain terminal for the second MOSFET.
6. Source2 (S2): The source terminal for the second MOSFET.
7. Drain (D): Common drain for both MOSFETs.
8. Source (S): Common source for both MOSFETs.
This device is commonly used in applications like power management and switching. It offers low on-resistance, making it suitable for efficiency-critical designs.
Manufacturer
Application
Equivalent
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