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SI2305-TP-HF
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- Datenblatt SI2305-TP-HF DataSheet
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Spezifikationen
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8 V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2A, 1.8V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 4 V |
| Power Dissipation (Max) | 1.4W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2305 |
Übersicht
Description
The device is housed in a compact SOT-23 package, which contributes to its efficiency in space-constrained designs. Its low on-resistance (R_DS(on)) minimizes power loss during operation, enhancing overall efficiency. The SI2305-TP-HF is also optimized for fast switching speeds, which is beneficial for high-frequency applications.
Additionally, it is offered in a RoHS-compliant package, ensuring it meets environmental standards for hazardous substances. This makes the SI2305-TP-HF a popular choice among engineers looking for reliable and efficient components in electronic circuit design.
Features
1. Low On-Resistance (R_DS(on)): Typically around 18 mΩ to minimize power loss.
2. High Voltage Rating: Supports drain-source voltages up to 30V, making it suitable for various circuits.
3. Fast Switching Speed: Enables efficient operation in high-frequency applications.
4. Compact Package: Available in SOT-23 package for space-saving designs.
5. Low Gate Threshold Voltage: Ensures efficient operation with low drive voltages.
6. RoHS Compliant: Environmentally friendly, free from hazardous substances.
These features make the SI2305-TP-HF ideal for applications like DC-DC converters, load switching, and power management in consumer electronics.
Package
Pinout
1. Gate (G): Controls the MOSFET operation.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the lower potential.
The specific pinout generally follows a standard layout in a small package, such as the SOT-23. The SI2305-TP-HF is designed for low-voltage applications and features fast switching times, making it suitable for power management and load switching in portable devices. It boasts a low on-resistance (R_DS(on)), which enhances its efficiency in various applications.
Manufacturer
Application
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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