SI2323DDS-T1-GE3

Bilder sind nur zur Referenz

SI2323DDS-T1-GE3

MOSFET P-CH 20V 5.3A SOT-23

100% Original und Neu

24 Stunden bereit zum Versand

365 Tage Garantie

RFQ & Erhalten Sie mehr Rabatte

Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 5.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 39mOhm @ 4.1A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 36 nC @ 8 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 1160 pF @ 10 V
PowerDissipation(Max) 960mW (Ta), 1.7W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23

Übersicht

Description

The SI2323DDS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications, including power management and switching. It features low on-resistance, which enhances efficiency and reduces heat generation during operation. The device is often used in low-voltage applications and is capable of handling significant current levels, making it suitable for power supply circuits, motor drives, and load switching.
Key specifications include a maximum drain-source voltage (Vds) of around 30V and a maximum continuous drain current (Id) of approximately 20A. Its compact package size helps in saving board space while providing reliable performance. The SI2323DDS-T1-GE3 is popular in consumer electronics, automotive systems, and industrial equipment due to its robust characteristics and cost-effectiveness.
When using this MOSFET, proper thermal management and circuit design considerations should be observed to ensure optimal operation and reliability in applications.

Features

The SI2323DDS-T1-GE3 is a dual N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Dual Channel: Contains two N-channel MOSFETs in a single package, optimizing space and reducing circuit complexity.
2. Low R_DS(on): Offers low on-resistance, minimizing power loss and improving efficiency, which is critical for applications like DC-DC converters.
3. High-Speed Switching: Capable of fast switching speeds, making it suitable for high-frequency applications.
4. High Voltage Rating: Typically rated for a drain-source voltage (V_DS) of up to 30V, allowing for versatility in a range of circuits.
5. Compact Package: Available in a compact SOIC-8 package, facilitating easy integration into PCB designs.
6. Thermal Performance: Features good thermal conductivity, which aids in heat dissipation during operation.
These attributes make the SI2323DDS-T1-GE3 ideal for applications in power management, automotive, and consumer electronics.

Package

The SI2323DDS-T1-GE3 is packaged in a SO-8 (Small Outline 8) package type. This surface-mount package is designed for compact applications, providing efficient thermal performance and space-saving advantages.

Pinout

The SI2323DDS-T1-GE3 is a N-channel MOSFET in a DPAK package, which has a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching behavior. Applying a voltage to this pin allows current to flow from the drain to the source.

2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the device is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit, completing the current path.
The SI2323DDS-T1-GE3 is designed for applications requiring efficient power management, such as in power supply circuits and DC-DC converters.

Manufacturer

The SI2323DDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a multinational company that specializes in manufacturing discrete semiconductors and passive electronic components. Founded in 1962, it is one of the largest manufacturers in the electronics industry, providing a wide range of products such as resistors, capacitors, inductors, diodes, and MOSFETs, among others. Vishay serves various sectors, including automotive, industrial, telecommunications, consumer electronics, and computer markets, focusing on high-performance and reliable components for a diverse array of applications.

Application

The SI2323DDS-T1-GE3 is a N-channel MOSFET primarily used in power management applications. Key areas include DC-DC converters, load switches, battery management systems, and motor control circuits. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies and portable electronics.

Equivalent

The SI2323DDS-T1-GE3 is a N-channel MOSFET. Equivalent products include:
1. IRLZ44N - A similar N-channel MOSFET with lower Rds(on).
2. FQP30N06L - Offers comparable voltage and current ratings.
3. BSS138 - Suitable for lower power applications.
Always verify specifications like Rds(on), Vds, and Id to ensure compatibility for your specific application.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

Die Zahlungsfrist ist 100% Prepaid.

Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:

1. PayPal

2. Kredit- / Debitkarte

3. Überweisung

Ähnliche