SI2328DS-T1-E3

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SI2328DS-T1-E3

MOSFET N-CH 100V 1.15A SOT23-3

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Spezifikationen

Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 730mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number SI2328

Übersicht

Description

The SI2328DS-T1-E3 is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) often used in electronic circuits for switching and amplifying signals. It is manufactured by Vishay Siliconix, a well-known producer of discrete semiconductors and passive components. This particular MOSFET is designed for applications requiring efficient power management and conversion.
Key features include:
1. N-Channel MOSFET: This indicates that the transistor is an N-channel type, which generally provides faster switching than P-channel MOSFETs.
2. Low On-Resistance: This characteristic ensures minimal power loss and heat generation, improving overall efficiency.
3. Surface Mount Package: The SI2328DS-T1-E3 is typically available in a small SOT-23 package, suitable for compact circuit designs.
4. Applications: Common uses include power management in portable electronics, DC-DC converters, and load switch applications.
5. Voltage and Current Ratings: It is essential to check the datasheet for specific voltage and current ratings to ensure compatibility with your application.
This MOSFET is valued for its efficiency, compact size, and versatility in modern electronic design.

Features

The SI2328DS-T1-E3 is a P-channel MOSFET designed for various applications, known for its compact size and efficiency. Key features include:
1. P-Channel MOSFET: It operates with a negative gate-source voltage, ideal for high-side switching.
2. Compact Package: Available in a small SOT-23 package, making it suitable for space-constrained applications.
3. Low On-Resistance: Offers low on-state resistance (RDS(on)), ensuring efficient performance with minimal power loss.
4. Fast Switching Speed: Provides rapid switching capabilities, enhancing performance in high-frequency applications.
5. Voltage and Current Ratings: Typically rated for a drain-source voltage (VDS) of about -20V and a continuous drain current (ID) around -3.2A.
6. Thermal Performance: Designed for effective heat dissipation, contributing to reliability and longevity.
7. Applications: Commonly used in load switching, DC-DC converters, battery-powered systems, and power management circuits.
Overall, the SI2328DS-T1-E3's features make it a versatile component for various electronic devices, balancing performance and size efficiency.

Package

The SI2328DS-T1-E3 is a MOSFET transistor packaged in a SOT-23 package type. This surface-mount package is commonly used for its compact size and suitability for automated assembly in electronic devices.

Pinout

The SI2328DS-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix. It typically comes in a SOT-23 package, which is a small form factor suitable for surface-mount technology. The SOT-23 package usually has 3 pins.
The functions of the pins are as follows:
1. Pin 1 (Gate): This is the control terminal of the MOSFET. Applying a voltage here controls the conductivity between the source and drain.
2. Pin 2 (Source): This terminal is where the current enters the MOSFET. In a P-channel MOSFET like the SI2328DS, the source is typically connected to a higher voltage.
3. Pin 3 (Drain): This terminal is where the current exits the MOSFET. It is connected to the load in typical configurations.
This MOSFET is used for switching applications and is known for its low on-resistance, making it efficient for power management tasks in various electronic devices.

Manufacturer

The SI2328DS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company known for producing a wide range of electronic components, including semiconductors and passive components. The company operates in the technology and electronics sector, supplying products that are used in various industries such as automotive, industrial, computing, consumer, telecommunications, and medical. Vishay's products are integral to the functioning and performance of electronic circuits and systems.

Application

The SI2328DS-T1-E3 is a P-channel MOSFET used primarily in applications requiring efficient power management and switching. Its typical application areas include load switching, battery management, DC-DC converters, and power supply circuits. Its compact package makes it suitable for space-constrained applications in consumer electronics, portable devices, and automotive systems. Additionally, it is used in applications that require fast switching speeds and low on-resistance for enhanced performance and energy efficiency.

Equivalent

The SI2328DS-T1-E3 is a P-channel MOSFET. Equivalent products include the Nexperia BSS84, ON Semiconductor MMBF5301, and Diodes Inc. ZXMP3A17E6. These components are similar in terms of their P-channel MOSFET characteristics, but always check the datasheets for specific electrical parameters and package compatibility to ensure a proper match for your application.

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