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SI2333CDS-T1-E3
MOSFET P-CH 12V 7.1A SOT23-3
- Hersteller
- Fr. Teil #SI2333CDS-T1-E3
- Paket
- Datenblatt SI2333CDS-T1-E3 DataSheet
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Spezifikationen
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1225 pF @ 6 V |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2333 |
Übersicht
Description
This course, denoted by the code SI2333CDS-T1-E3, appears to be a structured educational program, possibly within the realm of science, engineering, computer data systems, or a specialized field. The "SI" prefix might indicate a focus on systems or information science, with "CDS" suggesting computer data systems or a similar domain. "T1" could denote a term or semester number, and "E3" might refer to a specific section or level within the course series.
The course would likely cover foundational concepts pertinent to its field, aiming to equip students with essential knowledge and skills. Topics could range from theoretical frameworks to practical applications, depending on the discipline. It might include lectures, assignments, and projects designed to enhance understanding and proficiency. For precise details, including the course curriculum and objectives, consulting the academic institution's official course catalog or contacting the course instructor is recommended.
Features
1. N-Channel MOSFET: It is an N-channel MOSFET, which means it is typically used for switching and amplification in electronic circuits.
2. Low On-Resistance: The device features a low on-resistance, which minimizes power loss and enhances efficiency when conducting current.
3. Compact SOT-23 Package: The MOSFET is housed in a small SOT-23 package, suitable for space-constrained applications.
4. Fast Switching Speed: This MOSFET is designed for fast switching applications due to its low gate charge.
5. Wide Range of Applications: It can be used in load switching, battery management, and other power management applications.
6. Low Voltage Operation: Suitable for low voltage applications, often found in portable electronics.
These features make the SI2333CDS-T1-E3 a versatile component in various electronic devices requiring efficient and reliable switching performance.
Package
Pinout
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET by applying voltage, which allows current to flow between the source and drain.
2. Source (S): The source terminal is where the charge carriers enter the MOSFET. For P-channel MOSFETs, this is typically connected to a higher voltage.
3. Drain (D): This is the terminal through which current leaves the MOSFET.
The MOSFET is used for switching applications and power management in electronic circuits, providing efficient control of power flow in a compact footprint.
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