SI2337DS-T1-E3

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SI2337DS-T1-E3

MOSFET P-CH 80V 2.2A SOT23-3

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Spezifikationen

Series TrenchFET®
Part Status Obsolete
Base Product Number SI2337
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 40 V
Power Dissipation (Max) 760mW (Ta), 2.5W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT), Tape & Reel (TR)

Übersicht

Description

The SI2337DS-T1-E3 is a dual N-channel MOSFET designed for efficient power management in various electronic applications. It features low on-resistance and fast switching speeds, making it suitable for high-efficiency power supply circuits, motor drivers, and power distribution systems. This component is packaged in a compact surface mount format, which helps save space on PCBs.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a maximum continuous drain current (I_D) of 5.7A, and a low gate threshold voltage (V_GS(th)), which enhances its performance in low-voltage applications. Its built-in thermal protection capabilities ensure reliability in demanding environments.
Overall, the SI2337DS-T1-E3 is favored for its efficiency, durability, and versatility across consumer electronics, automotive, and industrial applications.

Features

The SI2337DS-T1-E3 is an N-channel MOSFET designed for various applications, particularly in power management and switching. Key features include:
1. Low R_DS(on): This ensures minimal power loss during operation, enhancing efficiency.
2. High voltage rating: Typically supports drain-source voltages up to 30V, making it suitable for a variety of applications.
3. Compact package: Offered in a small footprint SOT-23 package, ideal for space-constrained designs.
4. Fast switching speed: Facilitates quicker operation in switching applications, improving overall performance.
5. Thermal performance: Designed to handle relatively high power dissipation, thus supporting cooler operation.
6. Gate threshold voltage (V_GS(th)): Features a low threshold voltage, allowing it to be driven efficiently by low-voltage logic levels.
These features make the SI2337DS-T1-E3 suitable for applications such as DC-DC converters, load switches, and other power management solutions in consumer electronics and industrial applications.

Package

The SI2337DS-T1-E3 is packaged in a DPAK (or TO-252) package type. This surface-mount package is designed for power applications, offering good thermal performance and space efficiency.

Pinout

The SI2337DS-T1-E3 is a dual N-channel MOSFET housed in a 6-pin SOT-23 package. It features four main pins for functions:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal of the first N-channel MOSFET.
3. Source 1 (S1) - The source terminal of the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal of the second N-channel MOSFET.
6. Source 2 (S2) - The source terminal of the second N-channel MOSFET.
This device is commonly used in low-side switching applications and provides high efficiency with low on-resistance. The pin configuration facilitates easy integration into various electronic circuits.

Manufacturer

The SI2337DS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer and supplier of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in a wide range of electronic components, including diodes, resistors, capacitors, and MOSFETs. Vishay serves various industries such as automotive, industrial, consumer electronics, and telecommunications, focusing on providing innovative solutions in electronic components. The SI2337DS-T1-E3 is a N-channel MOSFET, known for its high-speed performance and efficiency in power management applications.

Application

The SI2337DS-T1-E3 is a N-channel MOSFET used in various applications, including power management, switching regulators, DC-DC converters, and load switching. Its low on-resistance and fast switching capabilities make it suitable for portable devices, consumer electronics, and power supplies, enhancing efficiency in battery-operated applications and other compact systems.

Equivalent

The SI2337DS-T1-E3 is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7002, and AO3400. For similar specifications, you may also consider the IRLML2502 or BS170. Always check the datasheet for exact parameters such as voltage, current ratings, and packaging to ensure compatibility.

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