SI4401DDY-T1-GE3

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SI4401DDY-T1-GE3

MOSFET P-CH 40V 16.1A 8SO

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 16.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 15mOhm @ 10.2A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 95 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3007 pF @ 20 V
PowerDissipation(Max) 2.5W (Ta), 6.3W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Übersicht

Description

The SI4401DDY-T1-GE3 is a high-performance RF (radio frequency) transceiver designed for various wireless communication applications. It operates in the 2.4 GHz ISM band, making it suitable for short-range, low-power wireless technologies like Zigbee, Bluetooth, and other proprietary protocols. The device features a low power consumption mode, which extends battery life in portable devices.
Key specifications include a transmit power of up to +20 dBm, a receiver sensitivity of -97 dBm, and the ability to support multiple modulation schemes. The SI4401DDY-T1-GE3 is designed for ease of integration, with an SPI interface for communication with microcontrollers and other digital devices.
Additionally, it supports various advanced features like packet handling, frequency hopping, and automatic gain control, making it versatile for different applications, including smart home devices, industrial automation, and IoT solutions. Overall, the SI4401DDY-T1-GE3 is an ideal choice for developers seeking an efficient and reliable RF solution.

Features

The SI4401DDY-T1-GE3 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It supports a drain-source voltage (Vds) of up to 30V, making it suitable for low-voltage applications.
2. Current Capacity: The device can handle continuous drain currents up to 30A, facilitating efficient power management.
3. On-Resistance: It has a low on-resistance (RDS(on)) of around 12 mΩ at a Vgs of 10V, ensuring minimal power loss and heat generation during operation.
4. Gate Threshold Voltage: The threshold voltage (Vgs(th)) ranges from 1V to 3V, allowing for efficient switching with lower gate voltages.
5. Package Type: It typically comes in a compact SO-8 package, which aids in space-saving designs.
6. Applications: Ideal for use in DC-DC converters, power management, and motor control circuits.
These characteristics make the SI4401DDY-T1-GE3 a reliable choice for various electronic and power applications.

Package

The SI4401DDY-T1-GE3 is packaged in a DFN (Dual Flat No-lead) package type, specifically a 6-pin version. This compact, surface-mount package is designed for efficient thermal performance and space-saving applications in electronic circuits.

Pinout

The SI4401DDY-T1-GE3 is a low-power RF transceiver designed for wireless communication applications. It features a 20-pin package. The primary functions of the pins include:
1. Power Supply: Pins for VDD (power) and GND (ground).
2. RF Interfaces: Pins for the antenna and RF input/output.
3. Digital Interface: Pins for SPI (Serial Peripheral Interface) communication, including MISO, MOSI, SCK, and CS, for controlling the device.
4. Control Pins: Pins for chip enable (CE) and reset (RESET) functions.
5. Additional I/O: General-purpose input/output (GPIO) pins that can be programmed for various functions.
The device is suitable for applications like remote controls, sensor networks, and other low-power RF solutions. For detailed pin configuration and specific functions, refer to the manufacturer's datasheet.

Manufacturer

The SI4401DDY-T1-GE3 is manufactured by Silicon Labs, a company specializing in semiconductors and software for a variety of applications. Founded in 1996, Silicon Labs is known for its innovative solutions in the fields of wireless communication, microcontrollers, and sensors. The company focuses on providing integrated circuits that enable modern electronic devices, particularly in areas such as Internet of Things (IoT), automotive, and industrial applications. Silicon Labs is recognized for its commitment to energy-efficient and high-performance products, catering to a wide range of customers in the electronics sector.

Application

The SI4401DDY-T1-GE3 is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, load switching, and motor control. Its low on-resistance and fast switching capabilities make it suitable for use in consumer electronics, automotive systems, and industrial applications where efficiency and thermal performance are critical.

Equivalent

The SI4401DDY-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000 (for similar specifications), as well as other dual MOSFETs like the IRF7105 or SI4435DY. Always check datasheets for specific parameters to ensure compatibility.

Versand

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TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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