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SI4559ADY-T1-E3
MOSFET N/P-CH 60V 5.3A 8SOIC
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Spezifikationen
| Series | TrenchFET® |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A, 3.9A |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V, 22nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V, 650pF @ 15V |
| Power - Max | 3.1W, 3.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI4559 |
Übersicht
Description
Key specifications include a low RDS(on) value, which enhances its efficiency by reducing power loss during operation. The MOSFET is typically used in applications such as load switching, motor control, and DC-DC converters. Its robust construction and thermal performance contribute to reliability in demanding environments.
Overall, the SI4559ADY-T1-E3 is a versatile and efficient choice for designers looking to optimize performance in low-voltage applications.
Features
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 30A, which supports high-power applications.
3. Low R_DS(on): Offers a low on-resistance, typically around 10 mΩ, which enhances efficiency by reducing power losses during operation.
4. Fast Switching Speed: Designed for rapid switching, making it ideal for applications requiring quick turn-on and turn-off characteristics.
5. Thermal Performance: Features good thermal dissipation capabilities, allowing it to operate effectively under high-temperature conditions.
6. Package Type: Typically housed in a TO-220 package, facilitating easy heat sinking and mechanical integrity.
These features make the SI4559ADY-T1-E3 suitable for use in automotive, industrial, and consumer electronics applications.
Package
Pinout
1. Gate1: Control input for the first N-channel MOSFET.
2. Drain1: Drain connection for the first N-channel MOSFET.
3. Source1: Source connection for the first N-channel MOSFET.
4. Gate2: Control input for the second N-channel MOSFET.
5. Drain2: Drain connection for the second N-channel MOSFET.
6. Source2: Source connection for the second N-channel MOSFET.
7. N/C: No connection; typically left floating.
8. N/C: No connection; typically left floating.
The device is known for its efficient performance in various electronic applications, including load switching and power management circuits.
Manufacturer
Application
Equivalent
Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
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