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SI4904DY-T1-E3
MOSFET 2N-CH 40V 8A 8SOIC
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Spezifikationen
| Series | TrenchFET® |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 20V |
| Power - Max | 3.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI4904 |
Übersicht
Description
Key specifications include a maximum drain-source voltage (VDS) of 30V, a maximum continuous drain current (ID) of 50A, and a low gate threshold voltage, allowing for easier drive requirements. Its compact package design enhances thermal performance and space efficiency in circuit layouts.
The SI4904DY-T1-E3 is often selected for applications such as DC-DC converters, motor drivers, and load switches, where efficient switching and robust performance are critical. Overall, this MOSFET is a versatile component that plays a significant role in modern electronic systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The MOSFET can handle continuous drain current (Id) up to 60A, ideal for high-current applications.
3. Low Rds(on): It offers a low on-resistance (Rds(on)) typically around 7.5 mΩ at a Vgs of 10V, which helps reduce power losses and improve efficiency.
4. Thermal Performance: It features a low thermal resistance, allowing for better heat dissipation during operation.
5. Fast Switching: The device supports high-speed switching, making it suitable for applications like DC-DC converters and power management circuits.
6. Package: It comes in a DPAK package, facilitating easy mounting and heat management.
These attributes make the SI4904DY-T1-E3 an excellent choice for applications in power electronics, motor control, and other similar areas.
Package
Pinout
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching action.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The input terminal connected to the power supply or ground.
The device features a low on-resistance, allowing for efficient power handling and minimal heat generation. It is designed for applications that require high-speed switching and efficiency. The SI4904DY-T1-E3 is commonly used in consumer electronics, automotive applications, and power supply circuits.
Manufacturer
Application
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Zahlungen
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