SI4966DY-T1-E3

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SI4966DY-T1-E3

MOSFET 2N-CH 20V 8SOIC

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Obsolete
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
RdsOn(Max)@IdVgs 25mOhm @ 7.1A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 50nC @ 4.5V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Übersicht

Description

The SI4966DY-T1-E3 is a high-performance, low-voltage, N-channel MOSFET designed for various power management applications. It features a low RDS(on) to minimize conduction losses and improve overall efficiency, making it suitable for use in power supplies, DC-DC converters, and motor control. The device operates within a wide voltage range, allowing it to handle different load conditions effectively.
Key specifications include a maximum drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating that supports robust performance in various applications. Its compact Surface Mount Device (SMD) package enhances design flexibility and ease of integration into circuit boards.
Additionally, the SI4966DY-T1-E3 is designed with a fast switching speed, which helps reduce transition losses, making it ideal for high-frequency applications. This MOSFET is typically used in consumer electronics, automotive, and industrial systems where reliability and efficiency are paramount.

Features

The SI4966DY-T1-E3 is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Dual N-Channel Configuration: Provides two MOSFETs in a single package for space-saving designs.
2. Low On-Resistance (RDS(on)): Ensures minimal power loss and improved efficiency, with typical values around 7.5 mΩ at VGS = 10V.
3. High-Speed Switching: Allows for rapid switching applications, making it suitable for DC-DC converters and power supply designs.
4. Wide Voltage Range: Supports a maximum drain-source voltage (VDS) of 30V, accommodating various voltage applications.
5. Low Gate Charge (QG): Reduces drive losses, enhancing overall circuit performance.
6. Thermal Performance: Packaged in a compact SO-8 footprint, facilitating better thermal dissipation.
7. RoHS Compliant: Ensures environmental safety and compliance with industry regulations.
Overall, the SI4966DY-T1-E3 is ideal for applications in power management, automotive, and other high-efficiency systems.

Package

The SI4966DY-T1-E3 is packaged in a 6-pin Dual Flat No Leads (DFN) package. This compact surface-mount package is designed for efficient thermal performance and space-saving applications.

Pinout

The SI4966DY-T1-E3 is a dual N-channel MOSFET designed for high-efficiency power management applications. It features a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate 1 (G1) - Gate terminal for the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
3. Drain 1 (D1) - Drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Gate terminal for the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
6. Drain 2 (D2) - Drain terminal for the second N-channel MOSFET.
7. Common Source (CS) - Common source connection for both MOSFETs.
8. Thermal Pad (TP) - Used for heat dissipation; requires PCB thermal management.
The device is commonly used in applications such as DC-DC converters, motor drives, and other power conversion systems.

Manufacturer

The SI4966DY-T1-E3 is manufactured by Skyworks Solutions, Inc. Skyworks is a semiconductor company that specializes in radio frequency (RF) and analog solutions for a wide range of applications, including wireless communications, automotive, and Internet of Things (IoT) devices. The company is known for its innovation in wireless technology and provides components that enable wireless connectivity in various consumer electronics and industrial applications. Skyworks plays a critical role in the development of mobile communication systems and is a leading supplier in the RF semiconductor market.

Application

The SI4966DY-T1-E3 is a low-voltage, high-efficiency MOSFET driver used in various applications such as power management, DC-DC converters, motor drives, and LED drivers. Its fast switching capabilities and low gate charge make it suitable for high-frequency applications, enhancing energy efficiency in power supplies and renewable energy systems.

Equivalent

The SI4966DY-T1-E3 is a dual N-channel MOSFET. Equivalent products include the BSS138, IRF3708, and NTP7650. Ensure to check specifications like voltage, current rating, and package type for compatibility in your application. Always consult with the manufacturer's datasheets for precise equivalents.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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