SI6968BEDQ-T1-E3

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SI6968BEDQ-T1-E3

MOSFET 2N-CH 20V 5.2A 8TSSOP

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Spezifikationen

Series TrenchFET®
Part Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.2A
Rds On (Max) @ Id, Vgs 22mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Power - Max 1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Base Product Number SI6968

Übersicht

Description

The SI6968BEDQ-T1-E3 is a N-channel MOSFET designed for high-efficiency switching applications. It features a low on-resistance and fast switching capabilities, making it suitable for use in power management systems, DC-DC converters, and other applications that require efficient power handling. The device typically operates in a voltage range suitable for medium to high power applications and is often used in automotive, industrial, and consumer electronics.
Key specifications include a maximum drain-source voltage (V_DS) rated at 30V, a continuous drain current (I_D) of up to 60A, and a low R_DS(on) value that minimizes power loss during operation. Its package type allows for effective thermal management, ensuring reliability in demanding environments.
Overall, the SI6968BEDQ-T1-E3 is a robust choice for engineers seeking reliable MOSFETs for high-performance applications.

Features

The SI6968BEDQ-T1-E3 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a drain-source voltage (V_DS) rating of 30V, enabling it to handle a variety of power management tasks.
2. Current Rating: It offers a continuous drain current (I_D) of up to 70A, making it suitable for high-current applications.
3. Low R_DS(on): The on-resistance (R_DS(on)) is low, usually around 5.5 mΩ, which minimizes power losses and improves efficiency.
4. Fast Switching Speed: Designed for high-speed switching applications, it enhances performance in power conversion and motor control.
5. Thermal Performance: The device features a low thermal resistance, allowing for effective heat dissipation.
6. Package Type: It comes in a TO-220 package, facilitating easy heat sinking and integration into various circuit designs.
This MOSFET is ideal for applications in power management, DC-DC converters, and motor drives.

Package

The SI6968BEDQ-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) form factor. This package type typically features 8 pins and is suitable for surface mounting on PCBs, offering efficient space utilization and good thermal performance.

Pinout

The SI6968BEDQ-T1-E3 is a dual N-channel MOSFET with a pin count of 8. It is primarily used in power management applications. The device features low on-resistance and high-speed switching capabilities, making it suitable for various applications, including DC-DC converters and motor control.
The pin functions are as follows:
1. Gate1 (G1) - Control input for the first N-channel MOSFET.
2. Drain1 (D1) - Drain terminal for the first MOSFET.
3. Source1 (S1) - Source terminal for the first MOSFET.
4. Gate2 (G2) - Control input for the second N-channel MOSFET.
5. Drain2 (D2) - Drain terminal for the second MOSFET.
6. Source2 (S2) - Source terminal for the second MOSFET.
7. Drain Source Common (D/S Common) - Common connection for the drains or sources.
8. Thermal Pad - For heat dissipation, typically connected to ground.
This configuration allows efficient control of power in electronic circuits.

Manufacturer

The manufacturer of the SI6968BEDQ-T1-E3 is Skyworks Solutions, Inc. Skyworks is a prominent semiconductor company that specializes in designing and manufacturing analog and mixed-signal semiconductors. Their products are widely used in various applications, including mobile communications, automotive electronics, and Internet of Things (IoT) devices. Skyworks focuses on providing high-performance solutions that enable connectivity and the efficient transmission of data across numerous industries. They are known for their innovation in RF and analog technologies and cater to both consumer and industrial markets.

Application

The SI6968BEDQ-T1-E3 is a N-channel MOSFET suitable for various applications, including DC-DC converters, motor drives, power management systems, and battery protection circuits. Its low on-resistance and fast switching characteristics make it ideal for power supply designs, LED drivers, and automotive applications where efficiency and thermal management are crucial.

Equivalent

The SI6968BEDQ-T1-E3 is a dual N-channel MOSFET with specific characteristics. Equivalent products include the BSS138, IRF740, and NXP's BSS84. However, for precise replacements, always check the datasheets for voltage, current ratings, and package compatibility. Additionally, consider other variations depending on your specific application requirements.

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