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SI7148DP-T1-E3
MOSFET N-CH 75V 28A PPAK SO-8
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Spezifikationen
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 35 V |
| Power Dissipation (Max) | 5.4W (Ta), 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SI7148 |
Übersicht
Description
This device is part of the Silicon Labs family of products and is intended for applications that operate within a wide voltage range and require fast switching speeds. The SI7148DP-T1-E3 is housed in a compact SOIC-8 package, facilitating easy integration into various electronic designs.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 30A, depending on thermal conditions. Its features and reliability make it a popular choice in consumer electronics, automotive, and industrial applications. For optimal performance, it is essential to follow the recommended operating conditions and thermal management practices.
Features
1. Dual-Channel Output: Drives two independent high-side MOSFETs, suitable for half-bridge configurations.
2. High Driving Capability: Provides a peak output current of up to 2A, enabling rapid switching and minimization of switching losses.
3. Wide Supply Voltage Range: Operates from 4.5V to 16V, accommodating various applications.
4. Fast Switching Speed: Low propagation delay and adjustable rise/fall times enhance efficiency in switching applications.
5. Integrated Bootstrap Circuitry: Simplifies high-side drive configuration, eliminating the need for external components.
6. Thermal Protection: Includes thermal shutdown features to prevent overheating and ensure reliability.
7. Compact Package: Offered in an 8-pin SOIC package, it allows for space-efficient designs.
These features make the SI7148DP-T1-E3 ideal for applications such as motor drives, power supplies, and other high-efficiency power management systems.
Package
Pinout
1. Gate (G) - Controls the turning on and off of the MOSFET.
2. Drain (D) - The terminal through which the current flows out when the MOSFET is in the on state.
3. Source (S) - The terminal through which the current enters when the MOSFET is on.
The SI7148DP-T1-E3 is designed for low on-resistance and high-speed switching applications, making it suitable for various power management and switching applications. It is typically used in power converters, motor drivers, and load switching applications. The package type is a Dual-DPAK (TO-252), which provides efficient thermal performance.
Manufacturer
Application
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Zahlungen
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