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SI7460DP-T1-E3
MOSFET N-CH 60V 11A PPAK SO-8
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Spezifikationen
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SI7460 |
Übersicht
Description
Key specifications include a maximum drain-source voltage (VDS) of 60V and a maximum continuous drain current (ID) of 60A at a specified temperature. The SI7460DP-T1-E3 is packaged in a DPAK (TO-252) form factor, which facilitates efficient thermal management. The device is also characterized by fast switching speeds, making it suitable for high-frequency applications.
Additionally, it has low gate charge (QG), ensuring reduced drive requirements from the controller, which is advantageous in compact circuit designs. Overall, the SI7460DP-T1-E3 is well-suited for a variety of applications requiring robust and efficient power control.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Current Handling: Capable of handling a continuous drain current (I_D) of up to 50A.
3. R_DS(on): Low on-resistance of approximately 10 mΩ, enabling reduced power loss and improved thermal performance.
4. Gate Threshold Voltage (V_GS(th)): Approximately 1.8V to 2.6V, allowing it to operate efficiently with low gate drive voltages.
5. Package: Available in a compact SO-8 package, facilitating space-saving designs.
6. High Speed: Fast switching capabilities suitable for applications such as power management and DC-DC converters.
7. Thermal Performance: Enhanced thermal characteristics for better reliability under high load conditions.
These features make the SI7460DP-T1-E3 suitable for a wide range of applications, including power supplies and motor drivers.
Package
Pinout
Pin Configuration:
1. Gate (G) - Controls the MOSFET's operation.
2. Drain (D) - Connects to the load and is where the current flows out.
3. Source (S) - Connects to the ground or negative side of the circuit.
4. Drain (D) - Duplicate for dual drain configuration.
5. Source (S) - Duplicate for dual source configuration.
6. Gate (G) - Duplicate for dual gate configuration.
This device features low on-resistance, high-speed switching capabilities, and is suitable for various applications requiring efficient power control. It is commonly used in consumer electronics, industrial automation, and automotive systems.
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Zahlungen
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