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SI7461DP-T1-E3
MOSFET P-CH 60V 8.6A PPAK SO-8
- Hersteller
- Fr. Teil #SI7461DP-T1-E3
- Paket PowerPAK-SO-8
- Datenblatt SI7461DP-T1-E3 DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 8.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 14.5mOhm @ 14.4A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 190 nC @ 10 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.9W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
Übersicht
Description
The MOSFET is housed in a compact SO-8 package, facilitating easy integration into systems with space constraints. Its fast switching capabilities contribute to high efficiency, particularly in high-frequency applications. Additionally, the SI7461DP-T1-E3 offers excellent thermal performance, ensuring reliable operation under demanding conditions.
Overall, this device is a robust choice for engineers aiming to enhance the efficiency and performance of their electronic designs.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: It can handle continuous drain currents up to 30A (at a specified temperature), which is ideal for high-power scenarios.
3. R_DS(on): Offers a low on-resistance (typically 7.8 mΩ), enhancing efficiency by reducing power losses during operation.
4. Fast Switching: Designed for rapid switching capabilities, which improves performance in PWM and other high-frequency applications.
5. Thermal Performance: Features a robust thermal design, with a maximum operating temperature up to 175°C, ensuring reliability in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
These characteristics make the SI7461DP-T1-E3 suitable for power management, motor control, and other applications requiring efficient power switching.
Package
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the load.
4. Drain (D) - Duplicate drain pin for improved current handling.
5. Source (S) - Duplicate source pin for improved current handling.
6. Gate (G) - Duplicate gate pin for flexibility in driving.
7. NC (Not Connected) - Not internally connected.
8. NC (Not Connected) - Not internally connected.
The SI7461DP-T1-E3 is known for its low on-resistance and high-speed switching capabilities, making it suitable for efficient power management solutions.
Manufacturer
Application
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Zahlungen
Payment Methods
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