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SI7463DP-T1-GE3
MOSFET P-CH 40V 11A PPAK SO-8
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- Fr. Teil #SI7463DP-T1-GE3
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- Datenblatt SI7463DP-T1-GE3 DataSheet
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Spezifikationen
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 18.6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SI7463 |
Übersicht
Description
The package type is a DFN (Dual Flat No-lead), which offers a compact footprint and good thermal performance, essential for applications like DC-DC converters, power management ICs, and motor drivers. Its robust performance characteristics make it a popular choice among designers looking to enhance efficiency and thermal performance in compact electronic designs.
Overall, the SI7463DP-T1-GE3 is ideal for various applications requiring reliable and efficient switching performance.
Features
1. Voltage Rating: Operates with a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Supports continuous drain current (I_D) up to 60A, making it suitable for high-current applications.
3. On-Resistance (R_DS(on)): Low on-resistance (approximately 10mΩ at V_GS = 10V), which minimizes power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): Low gate threshold voltage (1-3V), allowing for easy drive capability with low-voltage logic.
5. Thermal Performance: Features a robust package with good thermal dissipation properties, enhancing reliability and performance under load.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat management.
7. Applications: Suitable for DC-DC converters, motor control, and load switching in various consumer and industrial devices.
These features make the SI7463DP-T1-GE3 a versatile choice for engineers looking to optimize power efficiency in their designs.
Package
Pinout
1. Gate (G) - This pin controls the MOSFET's operation, turning it on or off based on the voltage applied.
2. Drain (D) - This pin connects to the load, allowing current to flow through the MOSFET when it is turned on.
3. Source (S) - This pin is connected to the ground or the lower potential side of the circuit.
The SI7463DP-T1-GE3 is designed for high-speed switching applications and is optimized for low on-resistance (R_ds(on)) and high efficiency.
Manufacturer
Application
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Zahlungen
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