SI7850DP-T1-E3

Bilder sind nur zur Referenz

SI7850DP-T1-E3

MOSFET N-CH 60V 6.2A PPAK SO-8

  • Hersteller
  • Fr. Teil #SI7850DP-T1-E3
  • Paket PowerPAK-SO-8
  • Datenblatt
  • Auf Lager3458

100% Original und Neu

24 Stunden bereit zum Versand

365 Tage Garantie

RFQ & Erhalten Sie mehr Rabatte

Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 6.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 22mOhm @ 10.3A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 27 nC @ 10 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.8W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Übersicht

Description

The SI7850DP-T1-E3 is a dual N-channel MOSFET designed for high efficiency and performance in power management applications. Manufactured by Vishay, it features a low on-resistance (RDS(on)) for reduced power loss, making it suitable for applications like DC-DC converters, power management circuits, and motor control.
With a voltage rating of 50V and a current rating of 30A, it offers robust performance under various conditions. The MOSFET is housed in a compact DPAK package, which helps in space-constrained applications while providing excellent thermal performance.
Key specifications include low gate charge, high-speed switching capabilities, and high thermal stability. These characteristics make the SI7850DP-T1-E3 ideal for modern electronic devices requiring efficient power conversion and management. Overall, it is a versatile component for engineers seeking reliable solutions in their designs.

Features

The SI7850DP-T1-E3 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Low On-Resistance (R_DS(on)): Provides efficient power conversion with minimal energy loss.
2. High Voltage Rating: Typically rated for up to 30V, making it suitable for various applications.
3. Low Gate Threshold Voltage: Ensures efficient operation in low-voltage drive circuits.
4. Fast Switching Speed: Allows for improved performance in high-frequency applications.
5. Thermal Performance: Enhanced thermal characteristics enable better heat dissipation and reliability.
6. Compact Package: Available in a small footprint, facilitating space-saving designs.
7. Applications: Ideal for power management, DC-DC converters, and motor control in consumer electronics and industrial systems.
These features make the SI7850DP-T1-E3 a versatile choice for designers looking to optimize efficiency and performance in their electronic systems.

Package

The SI7850DP-T1-E3 is packaged in a SO-8 (Small Outline 8) package, which is a narrow, surface-mount plastic package suitable for compact electronic designs.

Pinout

The SI7850DP-T1-E3 is a dual N-channel MOSFET with a total of 8 pins. The pin configuration is as follows:
1. Gate 1 – Controls the first N-channel MOSFET.
2. Source 1 – Source terminal for the first N-channel MOSFET.
3. Drain 1 – Drain terminal for the first N-channel MOSFET.
4. Gate 2 – Controls the second N-channel MOSFET.
5. Source 2 – Source terminal for the second N-channel MOSFET.
6. Drain 2 – Drain terminal for the second N-channel MOSFET.
7. Common Source – Often connected to ground or a common potential.
8. Thermal Pad – Used for heat dissipation; can be connected to a heat sink.
The device is typically used in power management applications, including DC-DC converters and load management, due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The SI7850DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its innovation in various technology sectors, including automotive, industrial, computing, telecommunications, and consumer electronics. Vishay produces a wide range of products, including MOSFETs, resistors, capacitors, diodes, and more, catering to both commercial and military applications. The SI7850DP-T1-E3 specifically is a dual N-channel MOSFET, widely used in power management applications for its efficiency and performance.

Application

The SI7850DP-T1-E3 is a N-channel MOSFET primarily used in power management applications such as DC-DC converters, load switches, and motor control circuits. Its low on-resistance and fast switching capabilities make it suitable for efficient power delivery in consumer electronics, automotive systems, and renewable energy solutions.

Equivalent

Equivalent products to the SI7850DP-T1-E3 MOSFET include the BSS123, IRLZ44N, and FQP30N06L. These components share similar characteristics, such as voltage ratings and on-resistance, but it's essential to verify specific parameters like gate threshold voltage and package type for your application. Always consult the datasheets for detailed comparisons.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

Die Zahlungsfrist ist 100% Prepaid.

Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:

1. PayPal

2. Kredit- / Debitkarte

3. Überweisung

Ähnliche