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SI7852DP-T1-GE3
MOSFET N-CH 80V 7.6A PPAK SO-8
- Hersteller
- Fr. Teil #SI7852DP-T1-GE3
- Paket PowerPAK-SO-8
- Datenblatt SI7852DP-T1-GE3 DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 7.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 16.5mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA (Min) |
| GateCharge(Qg)(Max)@Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.9W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
Übersicht
Description
The SI7852DP-T1-GE3 is packaged in a compact SO-8 surface-mount format, which aids in space-saving designs. Additionally, it includes a low gate charge, allowing for faster switching speeds and improved overall performance in power conversion circuits. This MOSFET is ideal for applications that require robustness, efficiency, and reliability in power delivery systems.
Features
1. Low On-Resistance (R_DS(on)): Provides efficient switching with minimal power loss.
2. High Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for a variety of applications.
3. Fast Switching Speed: Allows for high-frequency operation, improving overall system efficiency.
4. Enhanced Thermal Performance: Designed for better thermal dissipation, ensuring reliability in demanding environments.
5. Compact Package: Offered in a small DPAK package, which saves board space and facilitates easier integration into designs.
6. Low Gate Charge (Q_g): Reduces the energy required for driving the gate, enhancing efficiency in high-speed applications.
7. RoHS Compliant: Meets environmental standards for hazardous substances, making it suitable for a wide range of applications.
These features make the SI7852DP-T1-GE3 ideal for automotive, industrial, and consumer electronics applications where efficiency and reliability are paramount.
Package
Pinout
1. Gate (G) - Controls the switching of the transistor.
2. Drain (D) - The terminal through which the current flows out of the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
4. Gate (G) - Typically, there are two gate pins for enhanced performance.
5. Drain (D) - Two drain pins for improved thermal dissipation.
6. Source (S) - Two source pins for better current handling and thermal management.
7. N/C (Not Connected) - No electrical connection; typically for internal use or layout purposes.
The SI7852DP-T1-GE3 is designed for applications such as power management, load switching, and motor control due to its low on-resistance and high-speed switching capabilities.
Manufacturer
Application
Equivalent
Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
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