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SI7949DP-T1-E3
MOSFET 2P-CH 60V 3.2A PPAK SO-8
- Hersteller
- Fr. Teil #SI7949DP-T1-E3
- Paket PowerPAK-SO-8
- Datenblatt SI7949DP-T1-E3 DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 3.2A |
| RdsOn(Max)@IdVgs | 64mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 40nC @ 10V |
| Power-Max | 1.5W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® SO-8 Dual |
Übersicht
Description
With a maximum continuous drain current rating of 49A and a gate-source voltage range of ±20V, the SI7949DP-T1-E3 supports high-efficiency switching performance. Additionally, it has a fast switching speed, which minimizes energy losses during operation. The MOSFET is optimized for both high-frequency and high-current applications, making it versatile for use in automotive, industrial, and consumer electronics.
Overall, the SI7949DP-T1-E3 is a reliable choice for engineers seeking robust power management solutions in their designs.
Features
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain currents of up to 49A, allowing it to support high power loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 5.6 mΩ, which ensures minimal power loss during operation.
4. Fast Switching: The MOSFET is designed for rapid switching, enhancing performance in applications like DC-DC converters and power management circuits.
5. Thermal Performance: It comes in a TO-220 package, enabling effective heat dissipation and facilitating high thermal performance.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for compatibility with standard logic level drive voltages.
These features make the SI7949DP-T1-E3 an excellent choice for applications requiring efficient power switching and management.
Package
Pinout
1. G (Gate): Controls the MOSFET’s on/off state.
2. D (Drain): Connects to the load; where the current flows out.
3. S (Source): Connects to ground or the negative side of the power supply; where current flows in.
The pin layout typically follows this configuration:
- Pin 1: Gate
- Pin 2: Source
- Pin 3: Source
- Pin 4: Drain
- Pin 5: Drain
- Pins 6-8: Other connections for thermal or electrical performance enhancement as per specific applications.
The SI7949DP-T1-E3 is designed for low on-resistance, high-speed switching applications, making it suitable for power management in various electronic devices. Its robust construction allows it to handle high voltages and currents effectively.
Manufacturer
Application
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Versand
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Zahlungen
Payment Methods
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