SI9435BDY-T1-E3

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SI9435BDY-T1-E3

MOSFET P-CH 30V 4.1A 8SO

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  • Fr. Teil #SI9435BDY-T1-E3
  • Paket SOIC-8
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 4.1A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 42mOhm @ 5.7A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 24 nC @ 10 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.3W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Übersicht

Description

The SI9435BDY-T1-E3 is an N-channel MOSFET designed for low voltage, high-speed applications. It features a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) rating of up to 60A, making it suitable for power management and switching applications in consumer electronics, automotive, and industrial environments. The device is known for its low on-resistance (RDS(on)), which minimizes conduction losses and enhances efficiency.
This MOSFET comes in a TO-220 package, providing easy heat dissipation and robust mounting options. Its fast switching speed allows for efficient operation in high-frequency applications. The SI9435BDY-T1-E3 is commonly used in buck converters, power supplies, and motor control circuits. It also has a built-in gate protection feature to enhance reliability during operation. Overall, this MOSFET is well-suited for applications requiring efficient power management and high performance.

Features

The SI9435BDY-T1-E3 is a high-performance N-channel MOSFET from Vishay. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 30V.
2. Current Rating: The maximum continuous drain current (I_D) can reach up to 60A.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 8.5 mΩ at a gate-source voltage (V_GS) of 10V, improving efficiency and thermal performance.
4. Thermal Characteristics: The device has a high maximum junction temperature, allowing for better thermal management in applications.
5. Package Type: Encased in a TO-220 package, it provides good thermal dissipation.
6. Fast Switching Speed: Suitable for high-frequency applications due to its fast switching characteristics.
7. Applications: Ideal for DC-DC converters, power management, and motor control.
Overall, the SI9435BDY-T1-E3 is designed for efficiency and reliability in various power applications.

Package

The SI9435BDY-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) package.

Pinout

The SI9435BDY-T1-E3 is a dual N-channel MOSFET integrated circuit from Vishay. It features a pin count of 8. The device is designed for high-efficiency switching applications and is commonly used in power management, DC-DC converters, and motor control.
The pin functions are as follows:
1. Pin 1 (D1): Drain of the first N-channel MOSFET.
2. Pin 2 (G1): Gate of the first N-channel MOSFET.
3. Pin 3 (S1): Source of the first N-channel MOSFET.
4. Pin 4 (S2): Source of the second N-channel MOSFET.
5. Pin 5 (G2): Gate of the second N-channel MOSFET.
6. Pin 6 (D2): Drain of the second N-channel MOSFET.
7. Pin 7 (NC): No connection (not used).
8. Pin 8 (GND): Ground.
The Si9435BDY-T1-E3 has low on-resistance, making it suitable for applications requiring efficient power switching.

Manufacturer

The SI9435BDY-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in a wide range of products, including resistors, capacitors, inductors, diodes, and integrated circuits. Vishay serves various industries such as automotive, industrial, telecommunications, and consumer electronics. The SI9435BDY-T1-E3 is a N-channel MOSFET, which is commonly used in power management and switching applications. Vishay's extensive portfolio and innovation in electronic components make it a key player in the electronics market.

Application

The SI9435BDY-T1-E3 is a N-channel MOSFET primarily used in applications such as power management, switching regulators, DC-DC converters, and motor control. Its high efficiency and fast switching capabilities make it suitable for consumer electronics, automotive applications, and industrial power systems. Additionally, it can be utilized in load switching and high-frequency applications where low on-resistance and thermal performance are critical.

Equivalent

The SI9435BDY-T1-E3 is a N-channel MOSFET with specific voltage and current ratings. Equivalent products include the BSC027N06LS and the FDS6680N. Always verify the specifications such as V_DS, I_D, R_DS(on), and package type to ensure compatibility.

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