SIA436DJ-T1-GE3

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SIA436DJ-T1-GE3

MOSFET N-CH 8V 12A PPAK SC70-6

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Spezifikationen

Series TrenchFET®
Part Status Active
Base Product Number SIA436
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 15.7A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.2 nC @ 5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 1508 pF @ 4 V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package PowerPAK® SC-70-6
Packaging Cut Tape (CT), Tape & Reel (TR)

Übersicht

Description

The SIA436DJ-T1-GE3 is a dual N-channel MOSFET designed for power management applications. It features low on-resistance and fast switching speeds, making it suitable for use in various electronic circuits, including power supplies, motor drivers, and LED drivers. The device typically operates within a voltage range of up to 30V and can handle continuous drain currents of several amperes, depending on the specific application and thermal management.
Its compact package and efficient performance make it ideal for space-constrained designs, while it also offers thermal stability and reliability. Key specifications include a low threshold voltage and enhanced gate drive capabilities, which help improve overall efficiency in switching applications. The SIA436DJ-T1-GE3 is commonly utilized in consumer electronics, automotive systems, and industrial applications where efficient power conversion and management are critical.

Features

The SIA436DJ-T1-GE3 is a N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: With a continuous drain current (I_D) of up to 47A, it can handle significant loads.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 10 mΩ, which minimizes power loss and improves efficiency.
4. Fast Switching: The device supports fast switching speeds, enabling effective operation in high-frequency applications.
5. Thermal Performance: It features a high thermal conductivity, aiding in heat dissipation during operation.
6. Package Type: The MOSFET comes in a compact DPAK package, facilitating space-saving designs.
7. Applications: Ideal for use in power management, DC-DC converters, and motor control systems.
Overall, the SIA436DJ-T1-GE3 provides a combination of high performance and efficiency for various electronic applications.

Package

The SIA436DJ-T1-GE3 is a surface mount device packaged in a SOT-23 format.

Pinout

The SIA436DJ-T1-GE3 is a dual N-channel MOSFET with a pin count of 8.
Pin Configuration and Functions:
1. Gate1 (G1): Control gate for the first N-channel MOSFET.
2. Drain1 (D1): Drain terminal for the first N-channel MOSFET.
3. Source1 (S1): Source terminal for the first N-channel MOSFET.
4. Gate2 (G2): Control gate for the second N-channel MOSFET.
5. Drain2 (D2): Drain terminal for the second N-channel MOSFET.
6. Source2 (S2): Source terminal for the second N-channel MOSFET.
7. Drain3 (D3): Common drain for both MOSFETs (if applicable in certain configurations).
8. Source3 (S3): Common source for both MOSFETs (if applicable in certain configurations).
These MOSFETs are typically used for power management and switching applications, providing low on-resistance and fast switching capabilities.

Manufacturer

The SIA436DJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the production of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in manufacturing a wide range of products, including diodes, transistors, capacitors, resistors, and inductors, which are used in various applications across industries such as automotive, telecommunications, consumer electronics, and industrial equipment. Vishay is known for its innovation and high-quality standards in the electronics sector, supporting both commercial and military applications. The SIA436DJ-T1-GE3 specifically is a N-channel MOSFET designed for power management applications, reflecting Vishay's commitment to providing efficient and reliable electronic solutions.

Application

The SIA436DJ-T1-GE3 is a dual N-channel MOSFET commonly used in applications such as power management, load switching, and LED lighting. Its low on-resistance and fast switching capabilities make it suitable for use in DC-DC converters, battery management systems, and automotive electronics. Additionally, it can be found in consumer electronics for power supply circuits and motor control.

Equivalent

The SIA436DJ-T1-GE3 is a dual N-channel MOSFET. Equivalent products include:
1. BSS138 - A smaller N-channel MOSFET.
2. IRF3205 - A higher power N-channel MOSFET.
3. Si2302 - A dual N-channel MOSFET.
4. AO3400 - A low Rds(on) N-channel MOSFET.
Consider specifications like voltage, current ratings, and packaging for compatibility when selecting alternatives.

Versand

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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