SIA441DJ-T1-GE3

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SIA441DJ-T1-GE3

MOSFET P-CH 40V 12A PPAK SC70-6

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 47mOhm @ 4.4A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 890 pF @ 20 V
PowerDissipation(Max) 19W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SC-70-6

Übersicht

Description

The SIA441DJ-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency and low power loss in various electronic applications. It features a low on-resistance (R_DS(on)), making it suitable for use in power management, switching applications, and DC-DC converters.
This MOSFET operates with a maximum drain-source voltage (V_DS) of 30V and has a continuous current rating of up to 60A, depending on the operating conditions. Its fast switching capabilities allow for improved performance in high-frequency applications.
The SIA441DJ-T1-GE3 also boasts a compact package size, which helps save space on circuit boards, making it ideal for modern electronic devices. Its thermal performance is optimized to handle elevated temperatures, ensuring reliability and longevity in demanding environments.
This component is widely used in consumer electronics, automotive systems, and industrial applications, making it a versatile choice for engineers looking to enhance efficiency in their designs.

Features

The SIA441DJ-T1-GE3 is an N-channel MOSFET designed for high-efficiency applications. Its key features include:
1. Low On-Resistance (RDS(on)): Provides efficient conduction with reduced power loss, which is critical for high-performance applications.
2. Low Gate Threshold Voltage (VGS(th)): Ensures efficient switching at lower gate voltages, making it suitable for portable and battery-operated devices.
3. High Speed Switching: Facilitates faster switching times, improving performance in power management and conversion applications.
4. Compact Package: Typically available in a small footprint, aiding in space-constrained designs.
5. Thermal Stability: Enhanced thermal performance allows for better reliability in various operating conditions.
6. RoHS Compliant: Meets environmental regulations, making it suitable for modern electronic applications.
These features make the SIA441DJ-T1-GE3 ideal for applications in power management, DC-DC converters, and motor control systems.

Package

The SIA441DJ-T1-GE3 is packaged in a PowerPAK SO-8 format. This compact surface-mount package is designed for efficient thermal management and space-saving applications.

Pinout

The SIA441DJ-T1-GE3 is a N-channel MOSFET with a pin count of 8. It is designed for high-speed switching applications and is often used in power management and load switching circuits.
Pin Functions:
1. Gate (G) - Controls the MOSFET's operation.
2. Drain (D) - Connected to the load; current flows from drain to source when the MOSFET is on.
3. Source (S) - Connected to ground or the negative side of the load; current flows from source to drain when the MOSFET is activated.
4. Body Diode (internal) - Allows current to flow in the reverse direction when the MOSFET is off.
The remaining pins are typically for heat dissipation or internal connections. The SIA441DJ-T1-GE3 is known for its low on-resistance, making it efficient for various applications.

Manufacturer

The SIA441DJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a leading global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, the company serves various industries, including automotive, industrial, consumer, and telecommunications. Vishay specializes in products such as diodes, transistors, resistors, capacitors, and inductors, providing solutions for a wide range of electronic applications. Their focus on innovation and quality has established them as a key player in the electronics market.

Application

The SIA441DJ-T1-GE3 is a dual N-channel MOSFET primarily used in power management applications. Its application areas include switching power supplies, DC-DC converters, battery management systems, motor control, and LED drivers. Its compact size and efficient performance make it suitable for consumer electronics, automotive systems, and industrial equipment.

Equivalent

The SIA441DJ-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, SI2301, and AO3400, which have similar specifications such as voltage and current ratings. However, always verify the specific electrical characteristics and packaging to ensure compatibility for your application.

Versand

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von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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