SIA449DJ-T1-GE3

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SIA449DJ-T1-GE3

MOSFET P-CH 30V 12A PPAK SC70-6

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 10V
RdsOn(Max)@IdVgs 20mOhm @ 6A, 10V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 72 nC @ 10 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 2140 pF @ 15 V
PowerDissipation(Max) 3.5W (Ta), 19W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SC-70-6

Übersicht

Description

The SIA449DJ-T1-GE3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications. It features a low on-resistance (R_DS(on)), which enhances efficiency in power management systems, making it suitable for applications such as power supplies, motor control, and battery management.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 40A, depending on the thermal conditions. Its compact package and robust design allow for effective heat dissipation and integration into space-constrained environments.
The device's fast switching capabilities facilitate reduced losses and improved performance in electronic circuits. Additionally, it has a gate threshold voltage (V_GS(th)) that ensures reliable operation across various voltages.
Overall, the SIA449DJ-T1-GE3 is ideal for engineers seeking a reliable, efficient, and high-performance MOSFET for various electronic applications.

Features

The SIA449DJ-T1-GE3 is an N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 90A, providing high current capability.
3. R_DS(on): The on-resistance is low (typically around 10mΩ), which minimizes power losses during operation.
4. Gate Threshold Voltage: It has a gate-to-source threshold voltage (V_GS(th)) of around 2-4V, allowing for easy drive from standard control circuits.
5. Thermal Resistance: Good thermal performance with low junction-to-ambient thermal resistance, ensuring reliable operation under load.
6. Packaging: Available in a TO-220 package, facilitating easy heat dissipation and integration into various circuits.
These features make the SIA449DJ-T1-GE3 suitable for applications in power supplies, motor drivers, and other power conversion systems.

Package

The SIA449DJ-T1-GE3 is packaged in a SC-70 (SOT-323) type. This surface-mount package is compact and designed for space-constrained applications.

Pinout

The SIA449DJ-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Its primary function is to act as a switch or amplifier in various electronic circuits, particularly in power management applications.
Pinout and functions are as follows:
1. Gate (G): Controls the MOSFET's ON/OFF state.
2. Drain (D): The terminal through which the load current flows when the MOSFET is in the ON state.
3. Source (S): The terminal that connects to ground or the lower potential side of the circuit.
4. Body Diode (between D and S): Allows current to flow in the reverse direction, providing protection in certain applications.
The SIA449DJ-T1-GE3 is known for its low RDS(on), high-speed switching capabilities, and is commonly used in power supply circuits, motor drives, and other applications requiring efficient power management.

Manufacturer

The SIA449DJ-T1-GE3 is manufactured by ON Semiconductor, a prominent company in the semiconductor industry. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including analog, digital, and mixed-signal devices. They provide solutions for various applications, such as automotive, industrial, communications, computing, and consumer electronics. The company is known for its commitment to innovation and sustainability, focusing on energy-efficient products and technologies. Headquartered in Phoenix, Arizona, ON Semiconductor serves a global market and plays a significant role in advancing semiconductor technology.

Application

The SIA449DJ-T1-GE3 is a N-channel MOSFET commonly used in various applications, including power management, switching power supplies, DC-DC converters, motor control, and LED lighting. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in consumer electronics, automotive, and industrial applications.

Equivalent

The SIA449DJ-T1-GE3 is a N-channel MOSFET. Equivalent products include the IRF520, BS170, and BSS138. Always verify specifications such as voltage, current ratings, and packaging to ensure compatibility with your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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