SIA519EDJ-T1-GE3

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SIA519EDJ-T1-GE3

MOSFET N/P-CH 20V 4.5A SC70-6

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 4.5A
RdsOn(Max)@IdVgs 40mOhm @ 4.2A, 4.5V
Vgs(th)(Max)@Id 1.4V @ 250µA
GateCharge(Qg)(Max)@Vgs 12nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 350pF @ 10V
Power-Max 7.8W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case PowerPAK® SC-70-6 Dual

Übersicht

Description

The SIA519EDJ-T1-GE3 is a high-performance MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various applications, including power management and switching. It features low on-resistance, which enhances efficiency in power conversion processes.
Key specifications include:
- Type: N-channel MOSFET
- V_DS (Drain-Source Voltage): Typically around 30V.
- I_D (Continuous Drain Current): Up to 35A, depending on thermal conditions.
- R_DS(on): Low resistance value, contributing to reduced power loss.
- Package: Often comes in a compact DPAK or similar package for efficient thermal dissipation.
This device is widely used in power supplies, motor drives, and other electronic circuits that require fast switching and high efficiency. Its robustness and reliability make it suitable for various industrial applications. When implementing the SIA519EDJ-T1-GE3, proper thermal management must be considered to optimize performance and minimize failure risks.

Features

The SIA519EDJ-T1-GE3 is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 13A, providing robust performance in power management.
3. On-Resistance: The low on-resistance (R_DS(on)) reduces power loss and increases efficiency during operation, typically around 0.025 ohms at V_GS = 10V.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, enabling it to be driven easily by low-voltage logic levels.
5. Package Type: It comes in a compact DPAK package, suitable for space-constrained applications.
6. Fast Switching Speed: The device supports rapid switching, making it ideal for applications such as DC-DC converters and motor control.
These features make the SIA519EDJ-T1-GE3 a versatile choice for various electronic designs requiring efficient power management.

Package

The SIA519EDJ-T1-GE3 is packaged in a DPAK (TO-252) format. This package type is designed for surface mounting and is commonly used for power devices in applications requiring efficient thermal performance.

Pinout

The SIA519EDJ-T1-GE3 is a MOSFET with a pin count of 8. It is typically used in low-side switching applications. The main functions of its pins are as follows:
1. Gate (G): This pin controls the MOSFET operation, turning it on or off based on the voltage applied.
2. Drain (D): This pin is where the load is connected; it conducts current when the MOSFET is on.
3. Source (S): This pin is the return path for current; it connects to ground in low-side configurations.
4. Other pins (1, 2, 3, 4, 5, 6, 7): These pins are generally associated with different functionalities, including substrate and protective features, and may not be used directly in standard applications.
For precise pin assignments and detailed electrical characteristics, refer to the manufacturer's datasheet.

Manufacturer

The SIA519EDJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in discrete semiconductors and passive electronic components. The company specializes in a wide range of products, including diodes, transistors, capacitors, resistors, and various integrated circuits. Founded in 1962, Vishay serves diverse industries such as automotive, aerospace, telecommunications, and consumer electronics, providing innovative solutions for electronic applications. Their commitment to quality and technology has established them as a significant player in the electronics manufacturing sector.

Application

The SIA519EDJ-T1-GE3 is a N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, load switching, motor control, and signal amplification in consumer electronics, automotive systems, and industrial equipment. Its efficiency and thermal performance make it suitable for energy-efficient designs in compact electronic devices.

Equivalent

The SIA519EDJ-T1-GE3 is a low-power MOSFET designed for various applications. Equivalent products include the BSS138, 2N7000, and BS170, which can serve similar purposes in low-voltage switching applications. Always verify specifications such as voltage ratings, current ratings, and package types before substitution.

Versand

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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