SIC450ED-T1-GE3

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SIC450ED-T1-GE3

4.5 V TO 20 V INPUT, 15 A, 25 A

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Spezifikationen

Package 1
Series Tape & Reel (TR),Cut Tape (CT)
ProductStatus microBUCK®
Function Active
OutputConfiguration Step-Down
Topology Positive
OutputType Buck
NumberofOutputs Adjustable
Voltage-Input(Min) 1
Voltage-Input(Max) 4.5V
Voltage-Output(Min/Fixed) 20V
Voltage-Output(Max) 0.3V
Current-Output 12V
Frequency-Switching 40A
SynchronousRectifier 300kHz ~ 1.5MHz
OperatingTemperature Yes
MountingType -40°C ~ 85°C (TA)
Package/Case Surface Mount

Übersicht

Description

The course "Introduction to SIC450ED-T1-GE3" appears to be a specialized or advanced topic, possibly related to a particular field or discipline. Without specific context, it's challenging to provide a detailed description. However, generally, a course with such a title might include:
1. Overview: An introduction to the key concepts, theories, or technologies relevant to SIC450ED-T1-GE3. This could involve understanding the fundamental principles and applications.
2. Objectives: The course may aim to equip students with a foundational understanding of the subject, including its practical and theoretical aspects.
3. Content: Topics could range from basic definitions to more advanced discussions, possibly including case studies or real-world applications.
4. Methodology: Teaching methods might include lectures, discussions, hands-on projects, or collaborative work, depending on the subject matter.
5. Assessment: Evaluation could be based on assignments, quizzes, projects, or exams designed to test knowledge and application skills.
For precise details, such as the specific content and prerequisites, you would need to consult the course syllabus or contact the instructor or institution offering the course.

Features

The SIC450ED-T1-GE3 is a part of the CoolSiC™ Schottky diode family by Infineon Technologies. It typically features advanced silicon carbide (SiC) technology that offers high efficiency and reliability. Key features include:
1. SiC Technology: Provides higher switching frequencies, reduced power losses, and improved thermal performance compared to traditional silicon diodes.
2. High Efficiency: The diode exhibits low reverse recovery charge, leading to minimized switching losses.
3. Thermal Performance: Enhanced thermal conductivity allows for better heat management, making it suitable for high-temperature applications.
4. Robustness and Reliability: SiC diodes are known for their durability and longer lifespans, even in harsh operating conditions.
5. Compact Design: The device typically comes in a compact package, allowing for space-saving in circuit designs.
6. Applications: Ideal for use in power supplies, renewable energy systems, industrial applications, and automotive electronics.
These features make the SIC450ED-T1-GE3 a suitable choice for engineers looking to optimize the performance and efficiency of power electronic systems.

Package

The SIC450ED-T1-GE3 is a semiconductor device typically offered in a DPAK (TO-252) package type, which is a surface-mount package used for power devices.

Pinout

The SIC450ED-T1-GE3 is a power integrated module produced by Vishay Siliconix. It is primarily used for power management applications. This module typically comes in a PowerPAK SO-8L package and features 5 pins. These pins include connections for the various functions it supports, such as voltage input, voltage output, ground, and control signals for its built-in power MOSFET and driver circuits. The device is designed to enhance efficiency and performance in DC-DC converter applications and other power management systems by integrating multiple functions into a single module.

Manufacturer

The SIC450ED-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962 by Dr. Felix Zandman, the company is known for its extensive portfolio that includes products such as resistors, capacitors, inductors, diodes, and MOSFETs, like the SIC450ED-T1-GE3. Vishay serves a wide range of industries including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. The company is recognized for innovation and quality in its electronic components, contributing to advancements in technology and electronics applications worldwide.

Application

The SIC450ED-T1-GE3 is a silicon carbide (SiC) MOSFET designed for high-efficiency power applications. It is commonly used in electric vehicle (EV) powertrains, renewable energy systems like solar inverters, industrial motor drives, and power supplies. Its high-temperature and high-voltage capabilities make it ideal for improving energy efficiency and reducing system size and weight in these applications.

Equivalent

The SIC450ED-T1-GE3 is a power MOSFET, and equivalent products would typically include MOSFETs with similar voltage, current, and package specifications. Possible equivalents might include products from manufacturers like Infineon, STMicroelectronics, or ON Semiconductor. To find an exact match, compare parameters like voltage rating, current rating, RDS(on), and package type (e.g., PowerPAK SO-8). Always consult cross-reference tools or datasheets for precise matches.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

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