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SIRA00DP-T1-GE3
MOSFET N-CH 30V 100A PPAK SO-8
- Hersteller
- Fr. Teil #SIRA00DP-T1-GE3
- Paket
- Datenblatt SIRA00DP-T1-GE3 DataSheet
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Spezifikationen
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 1mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 220 nC @ 10 V |
| Vgs(Max) | +20V, -16V |
| InputCapacitance(Ciss)(Max)@Vds | 11700 pF @ 15 V |
| PowerDissipation(Max) | 6.25W (Ta), 104W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
Übersicht
Description
Participants can expect to engage in theoretical learning and practical exercises, aimed at developing skills necessary for effective decision-making and problem-solving. The course may also emphasize the use of software tools and methodologies relevant to the field.
For precise details, including objectives, curriculum, and prerequisites, it is advisable to consult the official course syllabus or the educational institution offering it.
Features
1. High Sensitivity: Designed for precise detection and measurement in various applications.
2. Durability: Built to withstand harsh environmental conditions, ensuring longevity in industrial settings.
3. Wide Operating Range: Functions effectively across a broad range of temperatures and pressures.
4. Real-Time Data: Provides instantaneous feedback and data transmission for monitoring systems.
5. User-Friendly Interface: Easy to operate with clear displays and intuitive controls.
6. Connectivity: Supports various communication protocols for integration into existing systems.
7. Low Power Consumption: Efficient energy use, making it suitable for continuous operation.
8. Compact Design: Space-saving form factor ideal for limited installation areas.
These features make the SIRA00DP-T1-GE3 suitable for applications in automation, robotics, and process control.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or inhibits current flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is turned on.
3. Source (S): The source pin is where the current exits the MOSFET when it is conducting.
In summary, the SIRA00DP-T1-GE3 has a pin count of 3, corresponding to the gate, drain, and source functions essential for its operation in switching and amplification applications.
Manufacturer
Application
Equivalent
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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