SIRA14BDP-T1-GE3

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SIRA14BDP-T1-GE3

MOSFET N-CH 30V 21A/64A PPAK SO8

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® Gen IV
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 21A (Ta), 64A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 5.38mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 22 nC @ 10 V
Vgs(Max) +20V, -16V
InputCapacitance(Ciss)(Max)@Vds 917 pF @ 15 V
PowerDissipation(Max) 3.7W (Ta), 36W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Übersicht

Description

SIRA14BDP-T1-GE3 is a variant of the SIRA series, typically associated with advanced technologies in the fields of telecommunications, data processing, or sensor technologies. The designation suggests it may belong to a specific product line meant for industrial applications, possibly featuring enhanced data processing capabilities, robust performance, and reliability.
Such devices often incorporate elements like high-speed data transfer, compatibility with various protocols, and integrated solutions for data handling. They are designed to meet the demands of modern infrastructure, ensuring seamless connectivity and efficient operation within a networked environment.
Applications may range from smart city solutions, IoT frameworks, to advanced industrial automation systems. The "T1" and "GE3" suffixes could indicate specific configurations or enhancements in processing power or connectivity options, tailored to particular use cases or industry standards.
For detailed specifications and applications, consulting the manufacturer's documentation is recommended.

Features

The SIRA14BDP-T1-GE3 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It typically supports high voltages, making it suitable for demanding applications.
2. Low On-Resistance: This minimizes power losses during operation, enhancing efficiency.
3. Fast Switching Speed: It allows for rapid switching, which is beneficial in high-frequency applications.
4. High Current Rating: Capable of handling substantial current loads, ensuring reliability in power applications.
5. Thermal Performance: Designed to operate efficiently at elevated temperatures, with good thermal conductivity.
6. Package Type: Often available in compact packages, facilitating easy integration into various circuit designs.
These features make the SIRA14BDP-T1-GE3 ideal for use in power supplies, motor drivers, and other electronic applications requiring efficient power management. Always consult the datasheet for specific electrical characteristics and ratings.

Package

The SIRA14BDP-T1-GE3 is packaged in a DPAK (TO-252) format. This type of package is commonly used for power transistors and provides efficient thermal performance and compact size for surface mount applications.

Pinout

The SIRA14BDP-T1-GE3 is a N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output where the load is connected.
3. Source (S) - The terminal connected to the ground or supply voltage.
This device is designed for various applications, including power management, switching, and amplifying signals in electronic circuits. It features low on-resistance and fast switching capabilities, making it suitable for efficient power conversion and control.

Manufacturer

The SIRA14BDP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a prominent multinational company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its wide range of products, including resistors, capacitors, inductors, diodes, and transistors, catering to various industries such as automotive, industrial, telecommunications, and consumer electronics. Vishay is recognized for its innovation and quality in the electronic components market, making it a key player in the global electronics supply chain.

Application

The SIRA14BDP-T1-GE3 is a high-performance phototransistor primarily used in applications such as optical sensing, infrared remote controls, and light detection systems. Its fast response time and high sensitivity make it suitable for consumer electronics, automation systems, and safety devices. Additionally, it is utilized in medical devices and industrial automation for precise light measurement and control.

Equivalent

The SIRA14BDP-T1-GE3 is a CMOS RF transceiver chip. Equivalent products include the SIRA14BDP-T1-GE3, SIRA14BDS-T1-GE3, and similar RF transceivers from other manufacturers, such as the ADF7021 from Analog Devices or the NRF24L01 from Nordic Semiconductor, depending on application requirements. Always verify specifications and compatibility for your specific use case.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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