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SIRA18DP-T1-GE3
MOSFET N-CH 30V 33A PPAK SO-8
- Hersteller
- Fr. Teil #SIRA18DP-T1-GE3
- Paket
- Datenblatt SIRA18DP-T1-GE3 DataSheet
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Spezifikationen
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 10 V |
| Vgs (Max) | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 15 V |
| Power Dissipation (Max) | 3.3W (Ta), 14.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SIRA18 |
Übersicht
Description
Key features often include over-voltage protection, over-current protection, and thermal shutdown capabilities, ensuring safe operation under various conditions. The SIRA18DP-T1-GE3 is commonly used in industrial automation, telecommunications, and consumer electronics, thanks to its versatility and robust performance.
In terms of specifications, it may provide various output ratings, and it's essential to refer to the manufacturer’s datasheet for exact parameters, including input voltage range, efficiency ratings, and operational temperature limits. Overall, the SIRA18DP-T1-GE3 is an ideal choice for users seeking reliable power solutions in compact formats.
Features
1. Isolation: Provides electrical isolation between input and output, enhancing safety and protecting equipment from surges.
2. Input Types: Supports various input signal types, including current and voltage signals, making it versatile for different applications.
3. Wide Range: Capable of handling a broad range of input and output voltage/current levels, accommodating diverse systems.
4. Compact Design: Features a compact form factor suitable for space-constrained environments.
5. High Accuracy: Offers high precision in signal transmission, ensuring reliable data transfer.
6. Robustness: Designed for harsh industrial environments, ensuring durability and longevity.
7. Easy Integration: Compatible with various control systems, simplifying integration into existing setups.
8. LED Indicators: Equipped with LED indicators for easy monitoring of operational status.
This device is ideal for applications requiring safe and reliable signal transmission in industrial automation and control systems.
Package
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal for the first N-channel MOSFET.
3. Source 1 (S1) - The source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal for the second N-channel MOSFET, which shares the same source connection as the first.
The source pins (S1 and S2) are typically connected together in applications. This MOSFET is commonly used in power management applications, including switching power supplies and motor control, due to its high efficiency and low on-resistance.
Manufacturer
Application
Equivalent
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
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