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SPD07N60C3
MOSFET N-CH 600V 7.3A TO252-3
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- Fr. Teil #SPD07N60C3
- Paket TO-252-3
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Spezifikationen
| Package | Bulk |
| Series | CoolMOS™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 7.3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 600mOhm @ 4.6A, 10V |
| Vgs(th)(Max)@Id | 3.9V @ 350µA |
| GateCharge(Qg)(Max)@Vgs | 27 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 790 pF @ 25 V |
| PowerDissipation(Max) | 83W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO252-3 |
Übersicht
Description
The device exhibits low on-resistance and high-speed switching capabilities, making it suitable for efficient power management. Its TO-220 package facilitates effective heat dissipation, allowing for improved thermal performance. The SPD07N60C3 also includes built-in protection features, such as avalanche rating, which enhances its reliability in demanding applications.
Overall, this MOSFET is ideal for engineers seeking robust solutions in high-voltage environments, combining performance with reliability. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (Id) of 7A, which is ideal for medium-power applications.
3. On-State Resistance: The Rds(on) is low, typically around 0.8 ohms, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 2V to 4V, allowing for easy drive with standard voltage levels.
5. Fast Switching: It features rapid switching capabilities, which enhances efficiency in switching power supplies and converters.
6. Package Type: Typically available in TO-220 or similar packages, facilitating good thermal management.
7. Applications: Suitable for use in power supplies, motor drives, and other applications requiring high efficiency and reliability.
These features make the SPD07N60C3 a versatile choice for engineers in power electronics.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to turn on, enabling current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. It is responsible for carrying the load current.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or the lower potential in a circuit.
The SPD07N60C3 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 7A. It is often used in power management, switching applications, and motor control circuits.
Manufacturer
Application
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Zahlungen
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