SQ2310ES-T1_GE3

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SQ2310ES-T1_GE3

MOSFET N-CH 20V 6A TO236

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Spezifikationen

Series TrenchFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 10 V
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number SQ2310

Übersicht

Description

The SQ2310ES-T1_GE3 is a high-performance, low-power, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management systems and electronic devices. It features a low gate threshold voltage, allowing efficient switching and reduced power losses. The device is characterized by its low on-resistance (R_DS(on)), which enhances its efficiency in high-speed switching applications.
Its compact package design facilitates integration into space-constrained circuits, making it suitable for consumer electronics, automotive applications, and more. The SQ2310ES-T1_GE3 is also known for its thermal stability and reliability under various operating conditions.
Engineered for ease of use, it operates efficiently at low voltages, ensuring compatibility with a range of electronic systems. Overall, this MOSFET is an excellent choice for designers looking to improve performance and reduce energy consumption in their applications.

Features

The SQ2310ES-T1_GE3 is a high-performance semiconductor device primarily used in power management applications. Key features include:
1. High Efficiency: Designed for optimal energy conversion, minimizing power loss.
2. Integrated Protection: Over-voltage, over-current, and thermal protection mechanisms enhance reliability.
3. Compact Design: Small footprint suitable for space-constrained applications.
4. Wide Voltage Range: Operates effectively across a broad input voltage range, accommodating various applications.
5. Fast Switching Speed: High-speed operation improves overall system performance.
6. Low RDS(on): Reduces conduction losses, further enhancing efficiency.
7. High Thermal Stability: Designed to withstand high temperatures, ensuring durability in demanding environments.
8. Multiple Package Options: Available in various packages for flexibility in design.
These features make the SQ2310ES-T1_GE3 ideal for use in DC-DC converters, battery management systems, and other power electronics applications.

Package

The SQ2310ES-T1_GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This surface-mount package features eight pins and is commonly used for integrated circuits due to its compact size and ease of handling.

Pinout

The SQ2310ES-T1_GE3 is a dual N-channel MOSFET in a compact surface-mount package. It typically features a pin count of 8. The primary functions of the SQ2310ES-T1_GE3 include high-speed switching and power management in various applications such as DC-DC converters, power supplies, and motor control circuits. The specific pin configuration includes source, drain, and gate connections for each of the two MOSFETs, allowing for efficient handling of high current and voltage levels. The device is designed for low on-resistance and fast switching capabilities, making it suitable for high-efficiency applications. For detailed specifications and electrical characteristics, consulting the manufacturer's datasheet is recommended.

Manufacturer

The SQ2310ES-T1_GE3 is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor is known for its focus on energy-efficient technologies, offering a wide range of products including image sensors, power management devices, and various integrated circuits. The company serves multiple industries, including automotive, industrial, and consumer electronics, and is recognized for its commitment to sustainability and innovation in semiconductor technology.

Application

The SQ2310ES-T1_GE3 is a high-speed, low-on-resistance N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, battery management systems, power supplies, and motor control circuits. It is suitable for use in consumer electronics, automotive systems, and industrial equipment due to its efficiency and thermal performance.

Equivalent

The SQ2310ES-T1_GE3 is a Schottky barrier diode. Equivalent products include the SB3100-50, MBR2305, and MBRF2305. Always verify specifications such as voltage, current ratings, and package type before substituting.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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