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SQ2318AES-T1_BE3
MOSFET N-CH 40V 8A SOT23-3
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- Fr. Teil #SQ2318AES-T1_BE3
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- Datenblatt SQ2318AES-T1_BE3 DataSheet
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Spezifikationen
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 7.9A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 553 pF @ 20 V |
| Power Dissipation (Max) | 3W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SQ2318 |
Übersicht
Description
If SQ2318AES-T1_BE3 is a course or educational module, it might cover introductory topics concerning AES encryption, exploring its principles, applications, and significance in cybersecurity. The course content would likely include the fundamentals of symmetric key encryption, cryptographic algorithms, and practical implementations in securing digital communication.
Without additional context or specific documentation, it's challenging to provide precise details about SQ2318AES-T1_BE3. For accurate information, referring to the manufacturer's datasheet, product description, or course syllabus would be essential.
Features
1. Voltage Rating: Designed to handle specific maximum voltages, ensuring reliability in various applications.
2. Current Capacity: Capable of operating with specific current levels, suitable for both low and high-power applications.
3. Low On-State Resistance: Offers low resistance when conducting, minimizing power loss and increasing efficiency.
4. Fast Switching Speed: Enables rapid transitions between on and off states, beneficial for high-speed applications.
5. Thermal Management: Includes features to manage heat dissipation effectively, such as efficient packaging or thermal pads.
6. Robust Design: Often comes with built-in protection against over-voltage, over-current, and thermal overload.
7. Package Type: Available in various package types to suit different mounting and space requirements.
Please refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Package
Pinout
The pin configuration generally includes:
1. Gate (G): This pin controls the conductivity between the drain and source. By applying a voltage to the gate, the transistor can be switched on or off.
2. Source (S): This pin is the source of carriers (electrons for N-channel, holes for P-channel) and is typically connected to ground.
3. Drain (D): This pin is where the load current flows out of the transistor.
These MOSFETs are widely used in applications like power management, load switching, and DC-DC converters due to their efficient switching capabilities. Always refer to the specific datasheet for precise technical details and functionality.
Manufacturer
Application
Equivalent
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Zahlungen
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