SQ2389ES-T1_GE3

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SQ2389ES-T1_GE3

MOSFET P-CH 40V 4.1A SOT23-3

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 4.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 94mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 12 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 420 pF @ 20 V
PowerDissipation(Max) 3W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Übersicht

Description

The SQ2389ES-T1_GE3 is a specific part number for a voltage regulator or a power management integrated circuit (PMIC) typically used in electronic devices. It is produced by a semiconductor manufacturer and designed for efficient power management in various applications, including consumer electronics, industrial devices, and automotive systems.
This component may feature low dropout (LDO) characteristics, enabling it to maintain a stable output voltage even when the input voltage is close to the output voltage level. It is often valued for its low quiescent current, thermal performance, and ability to support various output load requirements.
To understand its specifications, features, and applications better, it would be advisable to consult the manufacturer's datasheet, which provides detailed information about electrical characteristics, pin configuration, and recommended operating conditions.

Features

The SQ2389ES-T1_GE3 is a high-performance integrated circuit designed primarily for power management applications. Key features include:
1. Input Voltage Range: Supports a wide input voltage range, making it suitable for various applications.
2. High Efficiency: Optimized for low power loss and high efficiency, enhancing overall system performance.
3. Integrated Protection Features: Includes over-temperature, over-voltage, and short-circuit protection to ensure reliable operation.
4. Compact Design: Offered in a small package, facilitating space-saving designs in electronic devices.
5. Flexibility: Supports multiple output configurations, allowing for versatility in design requirements.
6. Thermal Management: Designed for effective heat dissipation, ensuring stable performance under varying conditions.
7. Low Standby Current: Minimizes power consumption during idle periods, contributing to energy efficiency.
These features make the SQ2389ES-T1_GE3 suitable for a wide range of applications, including consumer electronics, industrial systems, and automotive solutions.

Package

The SQ2389ES-T1_GE3 is packaged in a TSSOP (Thin Shrink Small Outline Package) format, which is a compact surface mount package commonly used for integrated circuits.

Pinout

The SQ2389ES-T1_GE3 is a dual N-channel MOSFET designed for power management applications. It features a total of 8 pins. The primary functions of the pins are as follows:
1. Gate (G) - Controls the MOSFET operation (typically 2 pins).
2. Drain (D) - Connects to the load (typically 2 pins).
3. Source (S) - Connects to ground or the power supply (typically 2 pins).
4. Common (C) - May serve as a common connection point (1 pin).
This device is used in applications like DC-DC converters and power switches, allowing efficient drive for loads. Its design ensures low on-resistance, contributing to better thermal performance and energy efficiency.

Manufacturer

The SQ2389ES-T1_GE3 is manufactured by Skyworks Solutions, Inc. Skyworks is a semiconductor company that specializes in designing and manufacturing high-performance analog and mixed-signal semiconductors, primarily for the wireless communications sector. They produce a wide range of products, including amplifiers, filters, and radio frequency (RF) components, which are used in various applications such as smartphones, tablets, and other wireless devices. Founded in 1962 and headquartered in Irvine, California, Skyworks plays a crucial role in enabling wireless connectivity and advancing technology in the rapidly evolving electronics market.

Application

The SQ2389ES-T1_GE3 is a low on-resistance N-channel MOSFET primarily used in power management applications. It is suitable for DC-DC converters, battery management systems, and load switches. Its efficiency and thermal performance make it ideal for consumer electronics, industrial equipment, and automotive applications, where compactness and reliability are essential.

Equivalent

The SQ2389ES-T1_GE3 is a MOSFET driver from Vishay. Equivalent products include the MIC4427 from Microchip, TC4420 from Microchip (formerly of Microchip Technology), and LM5101 from Texas Instruments. When looking for alternatives, consider specifications such as voltage ratings, current output, and switching speeds to ensure compatibility with your application. Always verify the specific requirements and characteristics for your circuit.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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