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SQD50P08-25L_GE3
MOSFET P-CH 80V 50A TO252AA
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Spezifikationen
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 10.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5350 pF @ 25 V |
| Power Dissipation (Max) | 136W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | SQD50 |
Übersicht
Description
Key specifications include a maximum drain-source voltage (V_DS) of -80V and a continuous drain current (I_D) of up to -50A, making it suitable for medium- to high-power applications. Its gate-source voltage (V_GS) range is typically ±20V, allowing for robust operation in different environments.
The SQD50P08-25L_GE3 is housed in a TO-252 package, which helps in efficient heat dissipation and compact installation on PCBs. Its low gate charge and fast switching speed contribute to improved overall system performance.
This MOSFET is manufactured by Vishay Siliconix and is designed to meet the demands of modern electronic systems in terms of reliability, performance, and energy efficiency.
Features
1. P-Channel MOSFET: It is designed for applications requiring P-channel operation.
2. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) rating of -80V and a continuous drain current (I_D) of up to -50A.
3. Low On-Resistance: The MOSFET features a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency.
4. Package Type: It is available in a TO-252 package, facilitating easy installation in various circuit boards.
5. Applications: Suitable for use in power management applications, load switching, and DC-DC converters.
6. Thermal Performance: Designed for efficient thermal performance, supporting robust operation under varying thermal conditions.
7. Enhanced Switching Speeds: Offers fast switching capabilities, which is beneficial for high-frequency applications.
These characteristics make the SQD50P08-25L_GE3 a versatile choice for designers looking to implement efficient and reliable power management solutions in their electronic projects.
Package
Pinout
1. Gate (G): This pin is responsible for turning the MOSFET on and off by applying a voltage.
2. Drain (D): This pin is connected to the load, and the current flows out from the drain when the MOSFET is on.
3. Source (S): This is the input pin for the current, where the current enters the MOSFET.
Additionally, the tab or the large metal part in the TO-252 package is often connected internally to the drain for better heat dissipation. The device is typically used for switching applications and efficient power management in circuits.
Manufacturer
Application
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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