SQM120P06-07L_GE3

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SQM120P06-07L_GE3

MOSFET P-CH 60V 120A TO263

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Spezifikationen

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 6.7mOhm @ 30A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 270 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 14280 pF @ 25 V
PowerDissipation(Max) 375W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-263 (D²Pak)

Übersicht

Description

The SQM120P06-07L_GE3 is a part of the semiconductor family, specifically designed as a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This component is known for its high efficiency and fast switching capabilities, making it suitable for various applications in power management, including DC-DC converters, motor drives, and power supply circuits.
Key specifications typically include a low on-resistance, high voltage rating, and robust thermal performance, allowing it to handle significant power loads while minimizing heat generation. The "GE3" designation often indicates that the component is manufactured using a specific process or material, enhancing its reliability and performance characteristics.
Engineers and designers commonly select the SQM120P06-07L_GE3 for applications that require efficient energy conversion and management, contributing to smaller, more efficient electronic designs. For detailed specifications and application guidelines, referring to the manufacturer's datasheet is recommended.

Features

The SQM120P06-07L_GE3 is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current (I_D) of up to 120A, facilitating high current handling.
3. R_DS(on): It offers low on-resistance (R_DS(on)), typically around 7 mΩ, ensuring efficient power conversion and reduced heat generation.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: Equipped with a TO-220 package, it provides good thermal dissipation capabilities.
6. Gate Threshold Voltage: A low gate threshold voltage enhances compatibility with low-voltage drive circuits.
These features make the SQM120P06-07L_GE3 suitable for applications such as power supplies, automotive systems, and industrial equipment.

Package

The SQM120P06-07L_GE3 is housed in a TO-220 package type. This package is known for its robust design, suitable for power applications, providing efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The SQM120P06-07L_GE3 is a N-channel MOSFET with a pin count of 5. Below are the pin functions:
1. Gate (G): Controls the MOSFET's switching function; applying a voltage to this pin turns the device on.
2. Drain (D): Connects to the load; current flows from this pin when the MOSFET is on.
3. Source (S): Connects to the ground or negative side of the supply; current exits this pin when the device is on.
4. Tab (T): Often used for heat dissipation; electrically connected to the source.
5. Gate (G) (again, in some packages): May have a second gate pin or be used for thermal management.
This MOSFET is designed for applications requiring efficient switching, such as in power management and motor control. Always refer to the specific datasheet for detailed electrical characteristics and usage guidelines.

Manufacturer

The SQM120P06-07L_GE3 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on applications in automotive, industrial, and Internet of Things (IoT) sectors, providing innovative solutions that enhance energy efficiency and connectivity in various technologies. Infineon is recognized for its commitment to quality and sustainability in semiconductor manufacturing.

Application

The SQM120P06-07L_GE3 is a power MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and switch-mode power supplies. It is suitable for automotive, industrial, and consumer electronics due to its high efficiency and low on-resistance, enabling effective switching and power handling.

Equivalent

The SQM120P06-07L_GE3 is a MOSFET. Equivalent products include the IRF120, STP120N06, and BUK120-100B. Always verify specifications, such as voltage, current ratings, and package types, before substituting components.

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