STB11NM60T4

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STB11NM60T4

MOSFET N-CH 650V 11A D2PAK

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Spezifikationen

Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™
ProductStatus Not For New Designs
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 11A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 450mOhm @ 5.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 30 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1000 pF @ 25 V
PowerDissipation(Max) 160W (Tc)
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Übersicht

Description

The STB11NM60T4 is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) rating of 11A, making it suitable for use in various high-voltage switching applications. This MOSFET is optimized for high efficiency, with a low on-resistance (Rds(on)) of around 0.25 ohms, which helps in reducing power losses.
Key characteristics include fast switching speeds, high thermal performance, and robustness against voltage spikes, making it ideal for use in power supplies, motor drives, and other electronic circuits where efficiency and reliability are critical. The device is typically housed in a TO-220 package for easy heat dissipation.
In summary, the STB11NM60T4 is a reliable choice for engineers looking to implement efficient power management in high-voltage systems.

Features

The STB11NM60T4 is a N-channel MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: 600V maximum drain-source voltage (V_DS), suitable for high-voltage applications.
- Current Rating: Continuous drain current (I_D) of 11A at a case temperature of 25°C.
- R_DS(on): Low on-resistance (0.7Ω typical at V_GS = 10V), which improves efficiency and reduces heat generation during operation.
- Gate Threshold Voltage: V_GS(th) between 2V to 4V, allowing for easy drive with standard logic levels.
- Fast Switching: Designed for fast switching applications, making it suitable for power supply and motor control circuits.
- Package Type: Available in a TO-220 package, providing good thermal performance and ease of mounting.
- Applications: Commonly used in switch mode power supplies, inverters, and industrial motor drives.
These features make the STB11NM60T4 a reliable choice for demanding power applications.

Package

The STB11NM60T4 is typically packaged in a TO-220 package type. This package provides efficient thermal performance and is commonly used for power MOSFETs in various applications.

Pinout

The STB11NM60T4 is a N-channel MOSFET designed for applications such as power management and switching. It features a TO-220 package with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A positive voltage applied to this pin turns the device on, allowing current to flow from the drain to the source.

2. Drain (D): This pin is the output terminal where the load is connected. Current flows from this pin to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative supply of the circuit. It completes the current path when the MOSFET is activated.
The STB11NM60T4 has a voltage rating of 600V and a current rating of 11A, making it suitable for high-voltage applications.

Manufacturer

The STB11NM60T4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design, development, manufacturing, and marketing of a wide range of semiconductor products, including power management devices, microcontrollers, and sensors. The company serves various markets, including automotive, industrial, consumer electronics, and communication. STMicroelectronics is known for its innovation and commitment to sustainability, focusing on energy efficiency and reducing environmental impact in its products and operations.

Application

The STB11NM60T4 is a N-channel MOSFET primarily used in power management applications such as switch-mode power supplies, DC-DC converters, and motor drives. Its high voltage and current handling capabilities make it suitable for industrial motor control, automotive applications, and consumer electronics. Additionally, it can be utilized in energy-efficient lighting systems and as a switching device in various electronic circuits.

Equivalent

The STB11NM60T4 is a N-channel MOSFET. Equivalent products include the IRF840, STP11NM60, MTP11N60E, and SPT11NM60. Always check datasheets for specific parameters like voltage, current ratings, and RDS(on) to ensure compatibility in your application.

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