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STB15N80K5
MOSFET N CH 800V 14A D2PAK
- Hersteller
- Fr. Teil #STB15N80K5
- Paket TO-263-3
- Datenblatt STB15N80K5 DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH5™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 375mOhm @ 7A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1100 pF @ 100 V |
| PowerDissipation(Max) | 190W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
Übersicht
Description
This MOSFET utilizes a TO-220 package, allowing for good thermal performance and easy mounting. It has a gate threshold voltage ranging from 2V to 4V, making it compatible with standard gate drive circuits. The STB15N80K5 is characterized by fast switching speeds, making it ideal for applications requiring rapid turn-on and turn-off cycles.
Overall, its combination of high voltage capability, low on-resistance, and robust thermal performance makes the STB15N80K5 a popular choice for engineers looking to design reliable and efficient power electronic systems.
Features
1. Voltage Rating: 800V, allowing it to handle high voltage applications.
2. Continuous Drain Current: 15A at a temperature of 25°C, providing reliable performance.
3. RDS(on): Low on-resistance of approximately 0.15Ω, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: Typically between 2-4V, ensuring compatibility with low-voltage drive circuits.
5. Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in switch-mode power supplies.
6. Thermal Resistance: Low thermal resistance ensures efficient heat dissipation, improving reliability.
7. Package Type: Available in TO-220 and DPAK packages, facilitating easy integration into various designs.
These features make the STB15N80K5 ideal for use in high-voltage applications requiring efficient switching and minimal heat generation.
Package
Pinout
1. Gate (G): This pin is used to control the device. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET. It is connected to the load in the circuit.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or the negative side of the power supply in a circuit.
The STB15N80K5 can handle a maximum drain-source voltage (V_DS) of 800V and has a maximum continuous drain current (I_D) of 15A. It is commonly used in power supplies, motor controls, and other high-voltage switching applications.
Manufacturer
Application
Equivalent
1. IRF840
2. MTP15N80E
3. FQP15N80
4. K15N80
Always verify specifications for voltage, current, and thermal characteristics to ensure compatibility in your application.
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Zahlungen
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