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STB6NK90ZT4
MOSFET N-CH 900V 5.8A D2PAK
- Hersteller
- Fr. Teil #STB6NK90ZT4
- Paket TO-263-3
- Datenblatt STB6NK90ZT4 DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 5.8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2Ohm @ 2.9A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 60.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1350 pF @ 25 V |
| PowerDissipation(Max) | 140W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Übersicht
Description
This MOSFET is characterized by low on-resistance (RDS(on)), which minimizes power loss during operation and enhances efficiency. The STB6NK90ZT4 is housed in a TO-220 package, allowing for effective heat dissipation. It also has fast switching capabilities, which are beneficial for high-frequency applications.
The device is often used in conjunction with drivers to enhance performance in switching applications. Its robust construction and reliable electrical characteristics make it a popular choice among engineers for designing efficient and durable electronic circuits.
Features
1. Voltage Rating: It can handle a drain-source voltage (Vds) of up to 900V, making it suitable for high-voltage circuits.
2. Current Rating: The maximum continuous drain current (Id) is 6A, allowing it to support moderate power levels.
3. RDS(on): It has a low on-resistance (RDS(on)), typically around 1.5 Ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is between 2V to 4V, allowing for efficient switching.
5. Package Type: It is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation.
6. Applications: Ideal for use in power supplies, motor drives, and other high-voltage switching applications.
Overall, the STB6NK90ZT4 is designed for reliability and efficiency in demanding electrical environments.
Package
Pinout
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage to this pin turns the device on or off.
2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): The source pin is the terminal through which current enters the MOSFET.
4. Tab (T): The tab is typically connected to the source internally and is used for heat dissipation.
The STB6NK90ZT4 is designed for high-voltage applications, supporting a maximum drain-source voltage (V_DS) of 900V and a continuous drain current (I_D) of 6A. It features low on-resistance and is suitable for various switching applications in power electronics.
Manufacturer
Application
Equivalent
1. MOSFETs:
- IRF840
- MTP6N90E
- FQP8N90C
2. Other options:
- APT70M90B2
- STW6NK90Z
Always verify specifications such as voltage, current, Rds(on), and package type for compatibility.
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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