STB6NK90ZT4

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STB6NK90ZT4

MOSFET N-CH 900V 5.8A D2PAK

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 900 V
Current-ContinuousDrain(Id)@25°C 5.8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2Ohm @ 2.9A, 10V
Vgs(th)(Max)@Id 4.5V @ 100µA
GateCharge(Qg)(Max)@Vgs 60.5 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1350 pF @ 25 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Übersicht

Description

The STB6NK90ZT4 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power electronics applications. It features a maximum drain-source voltage (VDS) of 900 volts and a continuous drain current (ID) rating of 6 amperes, making it suitable for high-voltage applications such as power supplies, motor drives, and industrial equipment.
This MOSFET is characterized by low on-resistance (RDS(on)), which minimizes power loss during operation and enhances efficiency. The STB6NK90ZT4 is housed in a TO-220 package, allowing for effective heat dissipation. It also has fast switching capabilities, which are beneficial for high-frequency applications.
The device is often used in conjunction with drivers to enhance performance in switching applications. Its robust construction and reliable electrical characteristics make it a popular choice among engineers for designing efficient and durable electronic circuits.

Features

The STB6NK90ZT4 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (Vds) of up to 900V, making it suitable for high-voltage circuits.
2. Current Rating: The maximum continuous drain current (Id) is 6A, allowing it to support moderate power levels.
3. RDS(on): It has a low on-resistance (RDS(on)), typically around 1.5 Ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is between 2V to 4V, allowing for efficient switching.
5. Package Type: It is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation.
6. Applications: Ideal for use in power supplies, motor drives, and other high-voltage switching applications.
Overall, the STB6NK90ZT4 is designed for reliability and efficiency in demanding electrical environments.

Package

The STB6NK90ZT4 is packaged in a TO-220 form factor, which is a widely used package type for power MOSFETs, allowing for efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The STB6NK90ZT4 is an N-channel MOSFET with a pin count of 4. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage to this pin turns the device on or off.

2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): The source pin is the terminal through which current enters the MOSFET.
4. Tab (T): The tab is typically connected to the source internally and is used for heat dissipation.
The STB6NK90ZT4 is designed for high-voltage applications, supporting a maximum drain-source voltage (V_DS) of 900V and a continuous drain current (I_D) of 6A. It features low on-resistance and is suitable for various switching applications in power electronics.

Manufacturer

The STB6NK90ZT4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including analog, digital, and mixed-signal devices. The company serves various sectors, including automotive, industrial, consumer electronics, and communication. Headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation in microelectronics and is one of the largest semiconductor manufacturers in the world. The STB6NK90ZT4 itself is a power MOSFET, commonly used in power management applications due to its efficiency and performance.

Application

The STB6NK90ZT4 is an N-channel MOSFET commonly used in various applications, including power supply circuits, motor control, switching regulators, and electronic lighting. Its high voltage and current handling capabilities make it suitable for industrial automation, automotive systems, and renewable energy systems like solar inverters. Additionally, it can be utilized in consumer electronics for efficient power management.

Equivalent

The STB6NK90ZT4 is a N-channel MOSFET with a 900V, 6A rating. Equivalent products include:
1. MOSFETs:
- IRF840
- MTP6N90E
- FQP8N90C
2. Other options:
- APT70M90B2
- STW6NK90Z
Always verify specifications such as voltage, current, Rds(on), and package type for compatibility.

Versand

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EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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