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STB75NF75T4
MOSFET N-CH 75V 80A D2PAK
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- Fr. Teil #STB75NF75T4
- Paket TO-263-3
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 75 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 11mOhm @ 40A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 160 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3700 pF @ 25 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Übersicht
Description
This MOSFET is often used in power supplies, motor drives, and automotive applications due to its fast switching capabilities and thermal stability. It is housed in a TO-220 package, allowing for effective heat dissipation.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and a maximum power dissipation of around 94W, depending on thermal conditions. Overall, the STB75NF75T4 is a versatile component for engineers looking to implement effective power management solutions in their designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 75V, suitable for high-voltage applications.
2. Continuous Drain Current: Capable of handling a continuous drain current (ID) of 75A at a specified temperature, making it suitable for power management.
3. Low RDS(on): Offers low on-resistance (typically around 0.025 ohms), which minimizes power losses and enhances efficiency.
4. Fast Switching Speed: Designed for quick switching applications, benefiting converters and motor drivers.
5. Thermal Resistance: Features low thermal resistance, allowing better heat dissipation and higher reliability in various operating conditions.
6. Package Type: Available in DPAK or TO-220 packages, facilitating easy integration into circuits.
These traits make the STB75NF75T4 ideal for use in power supplies, inverters, and other electronic applications where efficient power management is crucial.
Package
Pinout
1. Gate (G): This pin controls the switching of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin where the current enters the MOSFET from the load.
3. Source (S): This is the pin where the current exits the MOSFET to the ground or lower potential.
The STB75NF75T4 is designed for high-speed switching applications and can handle a maximum drain-source voltage (V_DS) of 75V and continuous drain current (I_D) of 75A, making it suitable for power management tasks in various electronic circuits.
Manufacturer
Application
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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