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STB80NF10T4
MOSFET N-CH 100V 80A D2PAK
- Hersteller
- Fr. Teil #STB80NF10T4
- Paket TO-263-3
- Datenblatt STB80NF10T4 DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 15mOhm @ 40A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 182 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5500 pF @ 25 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Übersicht
Description
Key characteristics include a low on-resistance (R_DS(on)) of 0.010 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss and enhances thermal performance. The device is packaged in a TO-220 format, allowing for effective heat dissipation.
This MOSFET is ideal for use in automotive, industrial, and consumer electronics due to its high reliability and efficiency. Additionally, it supports a wide range of gate drive requirements, making it versatile for different design configurations. Overall, the STB80NF10T4 is a robust solution for engineers seeking to optimize power conversion and switching performance.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 80A, providing significant power handling capability.
3. R_DS(on): It offers a low on-resistance of approximately 10mΩ, which contributes to reduced conduction losses and improved efficiency.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically between 2V and 4V, facilitating easy drive with standard gate voltages.
5. Package: It is available in a TO-220 package, offering good thermal performance and ease of mounting.
6. High-Speed Switching: Suitable for fast switching applications, enhancing overall system efficiency.
7. Applications: Commonly used in power supplies, motor drivers, and other high-frequency applications.
Overall, the STB80NF10T4 is ideal for engineers needing a reliable, high-efficiency MOSFET for demanding electronic circuits.
Package
Pinout
1. Gate (G): This is the control pin used to turn the MOSFET on or off. A voltage applied between the gate and source allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. The current flows from the drain to the source when the MOSFET is in the ON state.
3. Source (S): This pin is the reference point for the gate voltage and is typically connected to ground or the lower potential in the circuit.
The STB80NF10T4 is designed for applications requiring high-speed switching and is suitable for power management in various electronic devices. It features low on-resistance and high current handling capabilities.
Manufacturer
Application
Equivalent
1. IRF840
2. FQP80N10
3. AOD7N80
4. MTP80N10
Always check the specific datasheets for detailed specifications and ensure they meet your application requirements.
Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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