STB9NK80Z

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STB9NK80Z

MOSFET N-CH 800V 5.2A D2PAK

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Spezifikationen

Series SuperMESH™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1138 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number STB9

Übersicht

Description

The STB9NK80Z is a high-voltage N-channel MOSFET transistor designed for use in various electronic applications. Manufactured by STMicroelectronics, it is part of the MDmesh™ II family, known for its low on-resistance and high efficiency. The STB9NK80Z is particularly suitable for switching applications, such as power supplies, converters, and motor control systems.
Key features include a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of up to 7.5A at 25°C. It also boasts a low gate charge, which enhances its switching speed and efficiency, making it ideal for high-frequency operations.
The MOSFET is encapsulated in a DPAK package, offering good thermal performance and ease of mounting on PCBs. It is often chosen for designs requiring reliability and efficiency, especially in demanding environments.
With its robust design, the STB9NK80Z provides designers with a reliable component for developing energy-efficient power management systems.

Features

The STB9NK80Z is an N-channel MOSFET transistor known for its high-efficiency performance in power applications. It features a breakdown voltage of 800V, making it suitable for high-voltage operations. The MOSFET has a maximum continuous drain current of approximately 8A and a low on-state resistance, which contributes to reduced power loss and improved efficiency. Its fast switching capabilities make it ideal for applications requiring rapid on/off cycling. The STB9NK80Z is commonly used in power supply systems, motor control, and lighting circuits. It is housed in a TO-263 package, which provides good thermal performance and is designed for surface mounting. Additionally, it incorporates Zener-protected technology that enhances its robustness against voltage spikes.

Package

The STB9NK80Z is a power MOSFET, and it typically comes in a TO-263 package, also known as D2PAK. This package type is suitable for surface mounting and offers good heat dissipation, making it appropriate for applications requiring efficient thermal management.

Pinout

The STB9NK80Z is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from STMicroelectronics. It is typically used in various applications, including power management and switching circuits. This device is part of the MDmesh™ series, known for its high voltage capability and fast switching.
The STB9NK80Z is housed in a TO-263 package, which is a surface-mount plastic package. It has the following pin configuration:
1. Pin 1 - Gate (G): This pin controls the MOSFET's operation by applying a voltage that allows current to flow between the drain and source.
2. Pin 2 - Drain (D): This pin is connected to the load in a circuit. It is the terminal through which the main current flows when the MOSFET is in the 'on' state.
3. Pin 3 - Source (S): This pin is connected to the ground or reference point in a circuit. It serves as the return path for the current flowing through the drain.
Additionally, the tab (or heatsink area) of the package is internally connected to the drain, providing a path for heat dissipation.

Manufacturer

The STB9NK80Z is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including discrete and integrated circuits. Headquartered in Geneva, Switzerland, the company serves various markets such as automotive, industrial, personal electronics, and communications equipment. Known for its innovation and technological advancements, STMicroelectronics is a key player in the semiconductor industry.

Application

The STB9NK80Z is an N-channel MOSFET commonly used in applications requiring high voltage and current handling capabilities. Typical application areas include power supplies, motor control, lighting systems, and inverter circuits. Its high-speed switching and low on-resistance make it suitable for efficient power management in industrial and automotive environments. Additionally, it is used in consumer electronics for load switching and DC-DC converters.

Equivalent

The STB9NK80Z is an N-channel MOSFET produced by STMicroelectronics. Equivalent products include the IRFB9N80A (from Infineon Technologies), FDPF8N80NZ (from ON Semiconductor), and the IXFH8N80 (from IXYS). When selecting an equivalent, verify key specifications like voltage, current ratings, Rds(on), and package type to ensure compatibility.

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