STD3NK80ZT4

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STD3NK80ZT4

MOSFET N-CH 800V 2.5A DPAK

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 2.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.5Ohm @ 1.25A, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 485 pF @ 25 V
PowerDissipation(Max) 70W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Übersicht

Description

The STD3NK80ZT4 is a high-voltage N-channel MOSFET, designed for power switching applications. It features a voltage rating of 800V and a continuous drain current of up to 3A. This specific MOSFET is known for its low on-resistance (R_DS(on)), typically around 0.5 ohms, which contributes to efficient power management by minimizing conduction losses.
Key characteristics include a fast switching speed, which allows for efficient operation in applications such as power supplies, converters, and motor control. The device is housed in a TO-220 package, facilitating effective heat dissipation.
Ideal for use in high-speed and high-efficiency circuits, the STD3NK80ZT4 is commonly employed in industrial and consumer electronics, making it a versatile component in modern electronic designs. Always refer to the manufacturer's datasheet for detailed specifications, thermal management guidelines, and safe operating areas.

Features

The STD3NK80ZT4 is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, allowing it to handle high-voltage systems.
2. Current Rating: The continuous drain current (I_D) is 3A, making it suitable for medium-power applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low, which minimizes power loss during operation and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) provides reliable switching characteristics.
5. Fast Switching: Designed for fast switching applications, it is ideal for use in switch-mode power supplies and motor control.
6. Thermal Stability: The device features excellent thermal stability with a good thermal resistance, supporting robust operation under high temperatures.
Overall, the STD3NK80ZT4 is a versatile MOSFET suitable for various applications requiring high voltage and efficient power management.

Package

The STD3NK80ZT4 is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation and easy mounting on heat sinks, making it suitable for power applications.

Pinout

The STD3NK80ZT4 is an N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This is the terminal through which the current flows into the MOSFET from the load.
3. Source (S): This terminal is where the current exits the MOSFET to ground or the negative side of the load.
The STD3NK80ZT4 is rated for a maximum drain-source voltage (VDS) of 800V and a continuous drain current (ID) of 3A, making it suitable for high-voltage applications.

Manufacturer

The STD3NK80ZT4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor solutions, encompassing analog, digital, and mixed-signal products. The company serves various sectors, including automotive, industrial, personal electronics, and communication equipment. STMicroelectronics is known for its innovation in power management, microcontrollers, and sensors, contributing to the advancement of smart technology and the Internet of Things (IoT).

Application

The STD3NK80ZT4 is an N-channel MOSFET primarily used in power electronics applications such as switching power supplies, motor drives, and inverters. Its high voltage and current ratings make it suitable for industrial automation, renewable energy systems, and automotive applications where efficient power management and heat dissipation are essential. Additionally, it can be utilized in lighting control and electronic ballast circuits.

Equivalent

The STD3NK80ZT4 is an N-channel MOSFET with a voltage rating of 800V and a current rating of 3A. Equivalent products include the MTP3N80E, STP3NK80Z, and IRF840. Always verify specifications such as RDS(on), gate threshold voltage, and package type to ensure compatibility for your specific application.

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