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STD4NK80ZT4
MOSFET N-CH 800V 3A DPAK
- Hersteller
- Fr. Teil #STD4NK80ZT4
- Paket TO-252-3,DPAK(2Leads+Tab),SC-63
- Datenblatt
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.5Ohm @ 1.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 22.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 575 pF @ 25 V |
| PowerDissipation(Max) | 80W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Übersicht
Description
This device is commonly used in switch-mode power supplies, motor drives, and other applications requiring high voltage and efficient switching. It features a TO-220 package, which aids in effective heat dissipation. The STD4NK80ZT4 operates efficiently at high frequencies and provides thermal stability, making it suitable for demanding environments.
The MOSFET's gate is voltage-driven, allowing for low input power and fast switching speeds. Overall, the STD4NK80ZT4 is a reliable choice for designers looking to achieve efficient power management and control in their electronic circuits.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: It supports continuous drain current (I_D) up to 4A, with pulsed current capabilities much higher.
3. On-Resistance: The low on-resistance (R_DS(on)) of approximately 0.8 ohms minimizes power losses during operation.
4. Gate Threshold Voltage: It has a gate-source threshold voltage (V_GS(th)) ranging from 2V to 4V, suitable for logic-level drives.
5. Switching Speed: Designed for efficient switching, it offers fast switching characteristics, reducing switching losses.
6. Package Type: Typically available in a TO-220 package, allowing for effective heat dissipation.
These features make the STD4NK80ZT4 ideal for applications in power supplies, motor drives, and other high-performance electronic circuits.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching and is used to turn the device on and off.
2. Drain (D): This pin is connected to the load and allows current to flow through when the MOSFET is on.
3. Source (S): This pin is typically connected to the ground or the negative side of the power supply.
The device is designed for high-voltage applications, rated for 800V and can handle a continuous drain current of up to 4A. It is commonly used in power management, switching applications, and in circuits requiring efficient high-voltage control.
Manufacturer
Application
Equivalent
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Zahlungen
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