STD5N60M2

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STD5N60M2

MOSFET N-CH 600V 3.5A DPAK

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Spezifikationen

Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 3.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.4Ohm @ 1.7A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 8.5 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 211 pF @ 100 V
PowerDissipation(Max) 45W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Übersicht

Description

STD5N60M2 is a high‑voltage N‑channel power MOSFET from STMicroelectronics, used for switching in HV power electronics (SMPS, motor drivers, DC‑DC converters, inverters).
Key points:
- VDS: 600 V (high-voltage rating)
- ID: a few amperes (typical for light‑to‑moderate load switching)
- RDS(on): specified in the datasheet (low enough for efficient switching at 600 V)
- Technology: trench MOSFET for fast switching and rugged behavior; includes an intrinsic body diode
- Gate drive: requires around 10 V for full enhancement (not a logic‑level part)
- Packaging: commonly available in TO‑220AB and D²PAK/SMD options
Usage notes:
- Use proper heat sinking; respect SOA and avalanche energy ratings
- Drive with adequate gate voltage and control circuitry; monitor switching losses
Where to get more: STMicroelectronics datasheet for STD5N60M2 (parameters vary by lot and package).

Features

Here are typical features of STD5N60M2 (5A, 600V N-channel MOSFET):
- N-channel enhancement-mode power MOSFET
- Vds: 600 V (high-voltage blocking)
- Id: 5 A continuous drain current
- Robust power device using ST’s high-voltage MOSFET technology
- Fast switching capability for switch-mode applications
- Built-in body diode
- Avalanche-energy capable (rugged SOA performance)
- Available in standard power-package options (e.g., TO-220/TO-220FP, D²PAK variants)
- Suitable for high-voltage converters, motor drives, power supplies, and inverters
Note: exact Rds(on), gate threshold, and packaging variant depend on the specific device revision and package; consult the datasheet for exact values.

Package

The STD5N60M2 (STMicroelectronics) is supplied in a TO‑220 through‑hole plastic package (TO‑220AB).

Pinout

STD5N60M2 is a 3-pin N‑channel power MOSFET. Pin functions (looking at the front, pins left→right):
1. Gate — control input
2. Drain — main power input (also connected to the metal tab/heatsink)
3. Source — return/reference (output)
Metal tab/heat sink = Drain.

Manufacturer

- Manufacturer: STMicroelectronics (ST).
- Company type: A multinational semiconductor and electronics company that designs and manufactures integrated circuits, discrete semiconductors, sensors, microcontrollers, and related technologies. Headquartered in Geneva, Switzerland.

Application

Applications of STD5N60M2 (5 A, 600 V N-channel MOSFET):
- Offline switch-mode power supplies (SMPS) and PFC circuits
- High-voltage DC-DC converters and adapters
- Motor control and variable-speed drives
- Uninterruptible power supplies (UPS) and solar inverters
- General high-voltage switching in telecom/industrial power supplies

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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